A simple approach to form Ge nanocrystals embedded in amorphous Lu 2O3 high-k gate dielectric by pulsed laser ablation

C. L. Yuan*, P. Darmawan, Y. Setiawan, P. S. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

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Material Science

Medicine and Dentistry