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Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technology
C. S. Ho, K. L. Pey, H. Wong, R. P.G. Karunasirf, S. J. Chua, K. H. Lee, Y. Tang, S. M. Wong, L. H. Chan
Research output: Contribution to journal › Conference article › peer-review