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Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
W. A. Sasangka, G. J. Syaranamual, Y. Gao, R. I Made, C. L. Gan*, C. V. Thompson
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
9
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(Scopus)