Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formation

C. S. Ho*, K. L. Pey, H. Wong, R. P.G. Karunasiri, S. J. Chua, K. H. Lee, L. H. Chan

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Material Science

Agricultural and Biological Sciences

Chemical Engineering

Earth and Planetary Sciences