Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing

H. B. Zhao*, K. L. Pey, W. K. Choi, S. Chattopadhyay, E. A. Fitzgerald, D. A. Antoniadis, P. S. Lee

*Corresponding author for this work

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