Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

H. T. Tan, Y. Gao, G. J. Syaranamual, W. A. Sasangka, S. C. Foo, K. H. Lee, S. Arulkumaran, G. I. Ng, C. V. Thompson, C. L. Gan*

*Corresponding author for this work

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