Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer

T. Cahyadi, J. N. Tey, S. G. Mhaisalkar*, F. Boey, V. R. Rao, R. Lal, Z. H. Huang, G. J. Qi, Z. K. Chen, C. M. Ng

*Corresponding author for this work

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