Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices

P. Darmawan*, M. Y. Chan, T. Zhang, Y. Setiawan, H. L. Seng, T. K. Chan, T. Osipowicz, P. S. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices'. Together they form a unique fingerprint.

Material Science

Keyphrases

Earth and Planetary Sciences