Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing

S. L. Ng*, H. S. Lim, B. S. Ooi, Y. L. Lam, Y. Zhou, Y. C. Chan, V. Aimez, J. Beauvais, J. Beerens

*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

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