Abstract
Cu-based ternary chalcogenides have received great interest as low-cost alternatives to conventional photovoltaic materials. In this work, a large quantity of single-crystalline, orthorhombic phase Cu4Bi 4S9 nanoribbons are fabricated using a facile solvothermal method. The growth of the Cu4Bi4S9 nanoribbons is revealed to be a layer-by-layer stacking of Cu4Bi 4S9 thin slabs via dodecylamine (DDA) linker, in which the number of stacking layers, and, subsequently, the width-to-thickness ratio, depends on the DDA concentration. Optical investigations show that the as-prepared Cu4Bi4S9 nanoribbons have a narrow bandgap of Eg = 1.14 eV and enhanced surface photovoltage response in the entire visible wavelength range. It is indicated that these Cu 4Bi4S9 nanoribbons have potential application in photodetectors, solar cells, or other optoelectronic devices.
Original language | English |
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Pages (from-to) | 1299-1305 |
Number of pages | 7 |
Journal | Chemistry of Materials |
Volume | 23 |
Issue number | 5 |
DOIs | |
Publication status | Published - Mar 8 2011 |
Externally published | Yes |
ASJC Scopus Subject Areas
- General Chemistry
- General Chemical Engineering
- Materials Chemistry
Keywords
- chalcogenide
- CuBiS
- nanobelts
- photovoltaics
- solvothermal
- surface photovoltage