Trap-controlled behavior in ultrathin Lu₂O₃ high-k gate dielectrics

Engineering

• Si Substrate 100%
• Gate Dielectric 100%
• Room Temperature 50%
• Silicon Dioxide 50%
• High Resolution Transmission Electron Microscope 50%
• Thin Films 50%
• Oxide Thickness 50%
• Pulsed Laser 50%
• Charge Density 50%

Material Science

• Density 100%
• Dielectric Material 100%
• Oxide Compound 25%
• Film 25%
• Capacitance 25%
• Thin Films 25%
• Annealing 25%
• Pulsed Laser Deposition 25%
• Amorphous Material 25%

Keyphrases

• Charge Leakage 25%
• J-V Measurements 25%
• Post-annealing Condition 25%
• Fixed Charge Density 25%