3D EBAD characterizations on copper TSV for 3D interconnections

W. N. Putra; A. D. Trigg; H. Y. Li; C. L. Gan

doi:10.1109/IPFA.2014.6898181

3D EBAD characterizations on copper TSV for 3D interconnections

W. N. Putra^*, A. D. Trigg, H. Y. Li, C. L. Gan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Microstructure analysis plays an important role in the reliability study of copper Through-Silicon Vias (TSVs). While conventional 2-dimensional (2D) Electron Back-Scatter Diffraction (EBSD) is a useful technique, 3-dimensional (3D) EBSD characterization provides a more accurate picture of the TSV microstructure. Information that is missing in 2D observations, such as grain shape and volume, can be obtained from the 3D technique. In this study, we did 3D characterizations by serial sectioning of the TSV samples and mapped the microstructure on each slice. These maps were then reconstructed into 3D images. From the result, it showed that the increase in Cu grain volume after thermal annealing can be up to 99%, as compared with 55% and 67% increase in calculated grain volume as determined from single and averaged 2D EBSD maps, respectively.

Original language	English
Title of host publication	Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	295-299
Number of pages	5
ISBN (Electronic)	9781479939091
DOIs	https://doi.org/10.1109/IPFA.2014.6898181
Publication status	Published - Sept 12 2014
Externally published	Yes
Event	21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014 - Singapore, Singapore Duration: Jun 30 2014 → Jul 4 2014

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014
Country/Territory	Singapore
City	Singapore
Period	6/30/14 → 7/4/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Access to Document

10.1109/IPFA.2014.6898181

Cite this

Putra, W. N., Trigg, A. D., Li, H. Y., & Gan, C. L. (2014). 3D EBAD characterizations on copper TSV for 3D interconnections. In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014 (pp. 295-299). Article 6898181 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2014.6898181

Putra, W. N. ; Trigg, A. D. ; Li, H. Y. et al. / 3D EBAD characterizations on copper TSV for 3D interconnections. Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 295-299 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "3D EBAD characterizations on copper TSV for 3D interconnections",

abstract = "Microstructure analysis plays an important role in the reliability study of copper Through-Silicon Vias (TSVs). While conventional 2-dimensional (2D) Electron Back-Scatter Diffraction (EBSD) is a useful technique, 3-dimensional (3D) EBSD characterization provides a more accurate picture of the TSV microstructure. Information that is missing in 2D observations, such as grain shape and volume, can be obtained from the 3D technique. In this study, we did 3D characterizations by serial sectioning of the TSV samples and mapped the microstructure on each slice. These maps were then reconstructed into 3D images. From the result, it showed that the increase in Cu grain volume after thermal annealing can be up to 99\%, as compared with 55\% and 67\% increase in calculated grain volume as determined from single and averaged 2D EBSD maps, respectively.",

author = "Putra, \{W. N.\} and Trigg, \{A. D.\} and Li, \{H. Y.\} and Gan, \{C. L.\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014 ; Conference date: 30-06-2014 Through 04-07-2014",

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doi = "10.1109/IPFA.2014.6898181",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

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Putra, WN, Trigg, AD, Li, HY & Gan, CL 2014, 3D EBAD characterizations on copper TSV for 3D interconnections. in Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014., 6898181, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Institute of Electrical and Electronics Engineers Inc., pp. 295-299, 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014, Singapore, Singapore, 6/30/14. https://doi.org/10.1109/IPFA.2014.6898181

3D EBAD characterizations on copper TSV for 3D interconnections. / Putra, W. N.; Trigg, A. D.; Li, H. Y. et al.
Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 295-299 6898181 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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PY - 2014/9/12

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N2 - Microstructure analysis plays an important role in the reliability study of copper Through-Silicon Vias (TSVs). While conventional 2-dimensional (2D) Electron Back-Scatter Diffraction (EBSD) is a useful technique, 3-dimensional (3D) EBSD characterization provides a more accurate picture of the TSV microstructure. Information that is missing in 2D observations, such as grain shape and volume, can be obtained from the 3D technique. In this study, we did 3D characterizations by serial sectioning of the TSV samples and mapped the microstructure on each slice. These maps were then reconstructed into 3D images. From the result, it showed that the increase in Cu grain volume after thermal annealing can be up to 99%, as compared with 55% and 67% increase in calculated grain volume as determined from single and averaged 2D EBSD maps, respectively.

AB - Microstructure analysis plays an important role in the reliability study of copper Through-Silicon Vias (TSVs). While conventional 2-dimensional (2D) Electron Back-Scatter Diffraction (EBSD) is a useful technique, 3-dimensional (3D) EBSD characterization provides a more accurate picture of the TSV microstructure. Information that is missing in 2D observations, such as grain shape and volume, can be obtained from the 3D technique. In this study, we did 3D characterizations by serial sectioning of the TSV samples and mapped the microstructure on each slice. These maps were then reconstructed into 3D images. From the result, it showed that the increase in Cu grain volume after thermal annealing can be up to 99%, as compared with 55% and 67% increase in calculated grain volume as determined from single and averaged 2D EBSD maps, respectively.

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Putra WN, Trigg AD, Li HY, Gan CL. 3D EBAD characterizations on copper TSV for 3D interconnections. In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 295-299. 6898181. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2014.6898181

3D EBAD characterizations on copper TSV for 3D interconnections

Abstract

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