3R MoS2 with Broken Inversion Symmetry: A Promising Ultrathin Nonlinear Optical Device

Jia Shi, Peng Yu, Fucai Liu, Peng He, Rui Wang, Liang Qin, Junbo Zhou, Xin Li, Jiadong Zhou, Xinyu Sui, Shuai Zhang, Yanfeng Zhang, Qing Zhang, Tze Chien Sum, Xiaohui Qiu*, Zheng Liu, Xinfeng Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

268 Citations (Scopus)

Abstract

Nonlinear 2D layered crystals provide ideal platforms for applications and fundamental studies in ultrathin nonlinear optical (NLO) devices. However, the NLO frequency conversion efficiency constrained by lattice symmetry is still limited by layer numbers of 2D crystals. In this work, 3R MoS2 with broken inversion symmetry structure are grown and proved to be excellent NLO 2D crystals from monolayer (0.65 nm) toward bulk-like (300 nm) dimension. Thickness and wavelength-dependent second harmonic generation spectra offer the selection rules of appropriate working conditions. A model comprising of bulk nonlinear contribution and interface interaction is proposed to interpret the observed nonlinear behavior. Polarization enhancement with two petals along staggered stacking direction appears in 3R MoS2 is first observed and the robust polarization of 3R MoS2 crystal is caused by the retained broken inversion symmetry. The results provide a new arena for realizing ultrathin NLO devices for 2D layered materials.

Original languageEnglish
Article number1701486
JournalAdvanced Materials
Volume29
Issue number30
DOIs
Publication statusPublished - Aug 11 2017
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

ASJC Scopus Subject Areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • broken inversion symmetry
  • nonlinear optical (NLO) devices
  • polarization
  • second harmonic generation (SHG)

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