8.6% Efficiency CZTSSe solar cell with atomic layer deposited Zn-Sn-O buffer layer

Xianglin Li; Zhenghua Su; Selvaraj Venkataraj; Sudip Kumar Batabyal; Lydia Helena Wong

doi:10.1016/j.solmat.2016.05.032

8.6% Efficiency CZTSSe solar cell with atomic layer deposited Zn-Sn-O buffer layer

Xianglin Li, Zhenghua Su, Selvaraj Venkataraj, Sudip Kumar Batabyal, Lydia Helena Wong^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Cu₂ZnSn(S, Se)₄ (CZTSSe) device is fabricated with Zn_1-xSn_xO (ZTO) buffer layer deposited by atomic layer deposited (ALD). The ALD process results in a precise control of thickness and Sn/(Sn+Zn) ratio of the buffer layer. The performance of the CZTSSe device with ZTO buffer layer has been enhanced by adjusting proper Zn and Sn ratio during the ALD process. The optimized Sn/(Sn+Zn) pulse ratio is found to be around 0.167, with a thickness of around 50 nm. The champion device with a ZTO buffer layer has an efficiency of 8.60% (active area efficiency 9.20%) compared with 8.14% (active area efficiency 8.70%) of the reference solar cell with chemical bath deposited CdS buffer layer. The optimum device performance is a result of optimized band alignment between CZTSSe absorber and the ALD ZTO buffer as shown by ultraviolet photoelectron spectroscopy (UPS).

Original language	English
Pages (from-to)	101-107
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	157
DOIs	https://doi.org/10.1016/j.solmat.2016.05.032
Publication status	Published - Dec 1 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Keywords

Atomic layer deposition
CZTSSe
Solar cell
UPS
Zn-Sn-O

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2016.05.032

Cite this

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title = "8.6% Efficiency CZTSSe solar cell with atomic layer deposited Zn-Sn-O buffer layer",

abstract = "Cu2ZnSn(S, Se)4 (CZTSSe) device is fabricated with Zn1-xSnxO (ZTO) buffer layer deposited by atomic layer deposited (ALD). The ALD process results in a precise control of thickness and Sn/(Sn+Zn) ratio of the buffer layer. The performance of the CZTSSe device with ZTO buffer layer has been enhanced by adjusting proper Zn and Sn ratio during the ALD process. The optimized Sn/(Sn+Zn) pulse ratio is found to be around 0.167, with a thickness of around 50 nm. The champion device with a ZTO buffer layer has an efficiency of 8.60% (active area efficiency 9.20%) compared with 8.14% (active area efficiency 8.70%) of the reference solar cell with chemical bath deposited CdS buffer layer. The optimum device performance is a result of optimized band alignment between CZTSSe absorber and the ALD ZTO buffer as shown by ultraviolet photoelectron spectroscopy (UPS).",

keywords = "Atomic layer deposition, CZTSSe, Solar cell, UPS, Zn-Sn-O",

author = "Xianglin Li and Zhenghua Su and Selvaraj Venkataraj and Batabyal, {Sudip Kumar} and Wong, {Lydia Helena}",

year = "2016",

month = dec,

day = "1",

doi = "10.1016/j.solmat.2016.05.032",

language = "English",

volume = "157",

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journal = "Solar Energy Materials and Solar Cells",

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T1 - 8.6% Efficiency CZTSSe solar cell with atomic layer deposited Zn-Sn-O buffer layer

AU - Li, Xianglin

AU - Su, Zhenghua

AU - Venkataraj, Selvaraj

AU - Batabyal, Sudip Kumar

AU - Wong, Lydia Helena

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Cu2ZnSn(S, Se)4 (CZTSSe) device is fabricated with Zn1-xSnxO (ZTO) buffer layer deposited by atomic layer deposited (ALD). The ALD process results in a precise control of thickness and Sn/(Sn+Zn) ratio of the buffer layer. The performance of the CZTSSe device with ZTO buffer layer has been enhanced by adjusting proper Zn and Sn ratio during the ALD process. The optimized Sn/(Sn+Zn) pulse ratio is found to be around 0.167, with a thickness of around 50 nm. The champion device with a ZTO buffer layer has an efficiency of 8.60% (active area efficiency 9.20%) compared with 8.14% (active area efficiency 8.70%) of the reference solar cell with chemical bath deposited CdS buffer layer. The optimum device performance is a result of optimized band alignment between CZTSSe absorber and the ALD ZTO buffer as shown by ultraviolet photoelectron spectroscopy (UPS).

AB - Cu2ZnSn(S, Se)4 (CZTSSe) device is fabricated with Zn1-xSnxO (ZTO) buffer layer deposited by atomic layer deposited (ALD). The ALD process results in a precise control of thickness and Sn/(Sn+Zn) ratio of the buffer layer. The performance of the CZTSSe device with ZTO buffer layer has been enhanced by adjusting proper Zn and Sn ratio during the ALD process. The optimized Sn/(Sn+Zn) pulse ratio is found to be around 0.167, with a thickness of around 50 nm. The champion device with a ZTO buffer layer has an efficiency of 8.60% (active area efficiency 9.20%) compared with 8.14% (active area efficiency 8.70%) of the reference solar cell with chemical bath deposited CdS buffer layer. The optimum device performance is a result of optimized band alignment between CZTSSe absorber and the ALD ZTO buffer as shown by ultraviolet photoelectron spectroscopy (UPS).

KW - Atomic layer deposition

KW - CZTSSe

KW - Solar cell

KW - UPS

KW - Zn-Sn-O

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ER -

8.6% Efficiency CZTSSe solar cell with atomic layer deposited Zn-Sn-O buffer layer

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

UN SDGs

Access to Document

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