Abstract
High power density is required for power converter in more electric aircraft due to the strict demands of volume and weight, which makes silicon carbide (SiC) extremely attractive for this application. In this paper, a prototype of 50-kW SiC two-level three-phase voltage source inverter is demonstrated with a gravimetric power density of 26 kW/kg (without inclusion of filter). A gate assisted circuit is introduced to reduce the switching loss. In addition, the ringings of voltage and current due to parasitic parameters during the switching transition can also be mitigated. A mathematical model with consideration of various parasitic parameters is developed, which illustrates the parasitic effects in high-speed switching SiC power module. The converter is operated at a switching frequency up to 100 kHz and a narrow dead band of 250 ns. The measured efficiency is 97.91%.
Original language | English |
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Article number | 7906552 |
Pages (from-to) | 9124-9134 |
Number of pages | 11 |
Journal | IEEE Transactions on Industrial Electronics |
Volume | 64 |
Issue number | 11 |
DOIs | |
Publication status | Published - Nov 2017 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 1982-2012 IEEE.
ASJC Scopus Subject Areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
Keywords
- Efficiency
- gate assisted circuit (GAC)
- high-speed switching
- inverter
- parasitic effects
- silicon carbide (SiC)