A dynamic thermal controller for power semiconductor devices

Mohamed Halick Mohamed Sathik; Sundararajan Prasanth; Firman Sasongko; Sampath Kumar Padmanabhan; Josep Pou; Rejeki Simanjorang

doi:10.1109/APEC.2018.8341413

A dynamic thermal controller for power semiconductor devices

Mohamed Halick Mohamed Sathik, Sundararajan Prasanth, Firman Sasongko, Sampath Kumar Padmanabhan, Josep Pou, Rejeki Simanjorang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

Failures of power switches are linked directly to the reliability of power converters. Two most dominated failure mechanisms of insulated gate bipolar transistor (IGBTs) are solder fatigue and bond wire lift-off. These failure mechanisms are mainly triggered by the coefficient of thermal expansion (CTE) mismatch in the material interfaces. Generally, the CTE mismatch weakens the IGBT layer interfaces over time due to repetitive thermal cycling caused by load variations and environmental conditions. This paper proposes a dynamic thermal controller for power semiconductor devices to protect them from over temperature and thermal-cycling stress failures, and therefore, enhancing their reliability. The proposed control method consists of two temperature-related control parameters, namely, the gate voltage and fundamental frequency. These parameters are controlled individually or together to smoothen the junction temperature variation of a power semiconductor device. A 1.5-kW three-phase inverter prototype is developed and tested to validate the proposed thermal control technique.

Original language	English
Title of host publication	APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2792-2797
Number of pages	6
ISBN (Electronic)	9781538611807
DOIs	https://doi.org/10.1109/APEC.2018.8341413
Publication status	Published - Apr 18 2018
Externally published	Yes
Event	33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018 - San Antonio, United States Duration: Mar 4 2018 → Mar 8 2018

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume	2018-March

Conference

Conference	33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018
Country/Territory	United States
City	San Antonio
Period	3/4/18 → 3/8/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Keywords

Gate voltage control
Insulated gate bipolar transistor
Junction temperature
Power electronics reliability

Access to Document

10.1109/APEC.2018.8341413

Cite this

Sathik, M. H. M., Prasanth, S., Sasongko, F., Padmanabhan, S. K., Pou, J., & Simanjorang, R. (2018). A dynamic thermal controller for power semiconductor devices. In APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition (pp. 2792-2797). (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2018.8341413

Sathik, Mohamed Halick Mohamed ; Prasanth, Sundararajan ; Sasongko, Firman et al. / A dynamic thermal controller for power semiconductor devices. APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2792-2797 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

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abstract = "Failures of power switches are linked directly to the reliability of power converters. Two most dominated failure mechanisms of insulated gate bipolar transistor (IGBTs) are solder fatigue and bond wire lift-off. These failure mechanisms are mainly triggered by the coefficient of thermal expansion (CTE) mismatch in the material interfaces. Generally, the CTE mismatch weakens the IGBT layer interfaces over time due to repetitive thermal cycling caused by load variations and environmental conditions. This paper proposes a dynamic thermal controller for power semiconductor devices to protect them from over temperature and thermal-cycling stress failures, and therefore, enhancing their reliability. The proposed control method consists of two temperature-related control parameters, namely, the gate voltage and fundamental frequency. These parameters are controlled individually or together to smoothen the junction temperature variation of a power semiconductor device. A 1.5-kW three-phase inverter prototype is developed and tested to validate the proposed thermal control technique.",

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Sathik, MHM, Prasanth, S, Sasongko, F, Padmanabhan, SK, Pou, J & Simanjorang, R 2018, A dynamic thermal controller for power semiconductor devices. in APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. 2792-2797, 33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018, San Antonio, United States, 3/4/18. https://doi.org/10.1109/APEC.2018.8341413

A dynamic thermal controller for power semiconductor devices. / Sathik, Mohamed Halick Mohamed; Prasanth, Sundararajan; Sasongko, Firman et al.
APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2792-2797 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Prasanth, Sundararajan

AU - Sasongko, Firman

AU - Padmanabhan, Sampath Kumar

AU - Pou, Josep

AU - Simanjorang, Rejeki

PY - 2018/4/18

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N2 - Failures of power switches are linked directly to the reliability of power converters. Two most dominated failure mechanisms of insulated gate bipolar transistor (IGBTs) are solder fatigue and bond wire lift-off. These failure mechanisms are mainly triggered by the coefficient of thermal expansion (CTE) mismatch in the material interfaces. Generally, the CTE mismatch weakens the IGBT layer interfaces over time due to repetitive thermal cycling caused by load variations and environmental conditions. This paper proposes a dynamic thermal controller for power semiconductor devices to protect them from over temperature and thermal-cycling stress failures, and therefore, enhancing their reliability. The proposed control method consists of two temperature-related control parameters, namely, the gate voltage and fundamental frequency. These parameters are controlled individually or together to smoothen the junction temperature variation of a power semiconductor device. A 1.5-kW three-phase inverter prototype is developed and tested to validate the proposed thermal control technique.

AB - Failures of power switches are linked directly to the reliability of power converters. Two most dominated failure mechanisms of insulated gate bipolar transistor (IGBTs) are solder fatigue and bond wire lift-off. These failure mechanisms are mainly triggered by the coefficient of thermal expansion (CTE) mismatch in the material interfaces. Generally, the CTE mismatch weakens the IGBT layer interfaces over time due to repetitive thermal cycling caused by load variations and environmental conditions. This paper proposes a dynamic thermal controller for power semiconductor devices to protect them from over temperature and thermal-cycling stress failures, and therefore, enhancing their reliability. The proposed control method consists of two temperature-related control parameters, namely, the gate voltage and fundamental frequency. These parameters are controlled individually or together to smoothen the junction temperature variation of a power semiconductor device. A 1.5-kW three-phase inverter prototype is developed and tested to validate the proposed thermal control technique.

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KW - Power electronics reliability

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ER -

Sathik MHM, Prasanth S, Sasongko F, Padmanabhan SK, Pou J, Simanjorang R. A dynamic thermal controller for power semiconductor devices. In APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2792-2797. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). doi: 10.1109/APEC.2018.8341413

A dynamic thermal controller for power semiconductor devices

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus Subject Areas

Keywords

Access to Document

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