A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation

Y. Yang; X. W. Sun; B. K. Tay; G. F. You; S. T. Tan; K. L. Teo

doi:10.1063/1.3054639

A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation

Y. Yang, X. W. Sun, B. K. Tay, G. F. You, S. T. Tan, K. L. Teo

Research output: Contribution to journal › Article › peer-review

103 Citations (Scopus)

Abstract

We report stable and repeatable UV and red electroluminescence (EL) from ZnO nanorod (NR) array light-emitting diodes (LEDs), where the p -type ZnO was formed by As+ ion implantation into the as-grown ZnO NRs. Both doped and undoped single ZnO NRs were probed using nanomanipulator, where the former ones showed good rectification characteristics, confirming the formation of p-n homojunctions by ion implantation. Distinct EL emissions in UV and red regions were observed at room temperature under forward bias, where the emission intensity shows amplified spontaneous emission characteristics, suggesting high efficiency of these LEDs.

Original language	English
Article number	253107
Journal	Applied Physics Letters
Volume	93
Issue number	25
DOIs	https://doi.org/10.1063/1.3054639
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3054639

Cite this

@article{c50171d2276841308e898504301be022,

title = "A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation",

abstract = "We report stable and repeatable UV and red electroluminescence (EL) from ZnO nanorod (NR) array light-emitting diodes (LEDs), where the p -type ZnO was formed by As+ ion implantation into the as-grown ZnO NRs. Both doped and undoped single ZnO NRs were probed using nanomanipulator, where the former ones showed good rectification characteristics, confirming the formation of p-n homojunctions by ion implantation. Distinct EL emissions in UV and red regions were observed at room temperature under forward bias, where the emission intensity shows amplified spontaneous emission characteristics, suggesting high efficiency of these LEDs.",

author = "Y. Yang and Sun, {X. W.} and Tay, {B. K.} and You, {G. F.} and Tan, {S. T.} and Teo, {K. L.}",

year = "2008",

doi = "10.1063/1.3054639",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation

AU - Yang, Y.

AU - Sun, X. W.

AU - Tay, B. K.

AU - You, G. F.

AU - Tan, S. T.

AU - Teo, K. L.

PY - 2008

Y1 - 2008

N2 - We report stable and repeatable UV and red electroluminescence (EL) from ZnO nanorod (NR) array light-emitting diodes (LEDs), where the p -type ZnO was formed by As+ ion implantation into the as-grown ZnO NRs. Both doped and undoped single ZnO NRs were probed using nanomanipulator, where the former ones showed good rectification characteristics, confirming the formation of p-n homojunctions by ion implantation. Distinct EL emissions in UV and red regions were observed at room temperature under forward bias, where the emission intensity shows amplified spontaneous emission characteristics, suggesting high efficiency of these LEDs.

AB - We report stable and repeatable UV and red electroluminescence (EL) from ZnO nanorod (NR) array light-emitting diodes (LEDs), where the p -type ZnO was formed by As+ ion implantation into the as-grown ZnO NRs. Both doped and undoped single ZnO NRs were probed using nanomanipulator, where the former ones showed good rectification characteristics, confirming the formation of p-n homojunctions by ion implantation. Distinct EL emissions in UV and red regions were observed at room temperature under forward bias, where the emission intensity shows amplified spontaneous emission characteristics, suggesting high efficiency of these LEDs.

UR - http://www.scopus.com/inward/record.url?scp=58149170319&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149170319&partnerID=8YFLogxK

U2 - 10.1063/1.3054639

DO - 10.1063/1.3054639

M3 - Article

AN - SCOPUS:58149170319

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253107

ER -

A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this