A simple method to synthesize continuous large area nitrogen-doped graphene

Hui Gao; Li Song; Wenhua Guo; Liang Huang; Dezheng Yang; Fangcong Wang; Yalu Zuo; Xiaolong Fan; Zheng Liu; Wei Gao; Robert Vajtai; Ken Hackenberg; Pulickel M. Ajayan

doi:10.1016/j.carbon.2012.05.026

A simple method to synthesize continuous large area nitrogen-doped graphene

Hui Gao^*, Li Song, Wenhua Guo, Liang Huang, Dezheng Yang, Fangcong Wang, Yalu Zuo, Xiaolong Fan, Zheng Liu, Wei Gao, Robert Vajtai, Ken Hackenberg, Pulickel M. Ajayan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

143 Citations (Scopus)

Abstract

Large area nitrogen (N)-doped graphene films were grown on copper foil by chemical vapor deposition. The as-grown films consisted of a single atomic layer that was continuous across the copper surface steps and grain boundaries, and could be easily transferred to a variety of substrates. N-doping was confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental mapping. N atoms were suggested to mainly form a "pyrrolic" nitrogen structure, and the doping level of N reached up to 3.4 at.%. The N-doped graphene exhibited an n-type behavior, and nitrogen doping would open a band gap in the graphene. This study presents use of a new liquid precursor to obtain large area, continuous and mostly single atom layer N-doped graphene films.

Original language	English
Pages (from-to)	4476-4482
Number of pages	7
Journal	Carbon
Volume	50
Issue number	12
DOIs	https://doi.org/10.1016/j.carbon.2012.05.026
Publication status	Published - Oct 2012
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry
General Materials Science

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10.1016/j.carbon.2012.05.026

Cite this

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title = "A simple method to synthesize continuous large area nitrogen-doped graphene",

abstract = "Large area nitrogen (N)-doped graphene films were grown on copper foil by chemical vapor deposition. The as-grown films consisted of a single atomic layer that was continuous across the copper surface steps and grain boundaries, and could be easily transferred to a variety of substrates. N-doping was confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental mapping. N atoms were suggested to mainly form a {"}pyrrolic{"} nitrogen structure, and the doping level of N reached up to 3.4 at.%. The N-doped graphene exhibited an n-type behavior, and nitrogen doping would open a band gap in the graphene. This study presents use of a new liquid precursor to obtain large area, continuous and mostly single atom layer N-doped graphene films.",

author = "Hui Gao and Li Song and Wenhua Guo and Liang Huang and Dezheng Yang and Fangcong Wang and Yalu Zuo and Xiaolong Fan and Zheng Liu and Wei Gao and Robert Vajtai and Ken Hackenberg and Ajayan, {Pulickel M.}",

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doi = "10.1016/j.carbon.2012.05.026",

language = "English",

volume = "50",

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journal = "Carbon",

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TY - JOUR

T1 - A simple method to synthesize continuous large area nitrogen-doped graphene

AU - Gao, Hui

AU - Song, Li

AU - Guo, Wenhua

AU - Huang, Liang

AU - Yang, Dezheng

AU - Wang, Fangcong

AU - Zuo, Yalu

AU - Fan, Xiaolong

AU - Liu, Zheng

AU - Gao, Wei

AU - Vajtai, Robert

AU - Hackenberg, Ken

AU - Ajayan, Pulickel M.

PY - 2012/10

Y1 - 2012/10

N2 - Large area nitrogen (N)-doped graphene films were grown on copper foil by chemical vapor deposition. The as-grown films consisted of a single atomic layer that was continuous across the copper surface steps and grain boundaries, and could be easily transferred to a variety of substrates. N-doping was confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental mapping. N atoms were suggested to mainly form a "pyrrolic" nitrogen structure, and the doping level of N reached up to 3.4 at.%. The N-doped graphene exhibited an n-type behavior, and nitrogen doping would open a band gap in the graphene. This study presents use of a new liquid precursor to obtain large area, continuous and mostly single atom layer N-doped graphene films.

AB - Large area nitrogen (N)-doped graphene films were grown on copper foil by chemical vapor deposition. The as-grown films consisted of a single atomic layer that was continuous across the copper surface steps and grain boundaries, and could be easily transferred to a variety of substrates. N-doping was confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental mapping. N atoms were suggested to mainly form a "pyrrolic" nitrogen structure, and the doping level of N reached up to 3.4 at.%. The N-doped graphene exhibited an n-type behavior, and nitrogen doping would open a band gap in the graphene. This study presents use of a new liquid precursor to obtain large area, continuous and mostly single atom layer N-doped graphene films.

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DO - 10.1016/j.carbon.2012.05.026

M3 - Article

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SN - 0008-6223

VL - 50

SP - 4476

EP - 4482

JO - Carbon

JF - Carbon

IS - 12

ER -

A simple method to synthesize continuous large area nitrogen-doped graphene

Abstract

ASJC Scopus Subject Areas

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