Adhesion study of tetra methyl cyclo tetra siloxanes (TMCTS) and tri methyl silane (3MS)-based low-k films

J. Widodo; M. Damayanti; S. G. Mhaisalkar; W. Lu; S. Ong; T. Sritharan; K. Y. Zeng; L. C. Hsia

doi:10.1016/j.mee.2004.11.017

Adhesion study of tetra methyl cyclo tetra siloxanes (TMCTS) and tri methyl silane (3MS)-based low-k films

J. Widodo^*, M. Damayanti, S. G. Mhaisalkar, W. Lu, S. Ong, T. Sritharan, K. Y. Zeng, L. C. Hsia

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Chemical vapor deposited (CVD) low-k films using tri methyl silane (3MS) precursors and tetra methyl cyclo tetra siloxanes (TMCTS) precursors were studied. Films were deposited by means of four processes, namely, O ₂, O₂ + He process and CO₂, CO₂ + O₂ process for 3MS and TMCTS precursors, respectively. Interfacial adhesion energy (G_c), of low-k/Si samples, as measured by a 4-point bending test displayed a linear relationship with film hardness and modulus. Fractography studies indicated two possible failure modes with the primary interface of delamination being either at low-k/Si or Si/epoxy interface. In the former, once delamination initiated at the low-k/Si interface, secondary delamination at the Si/epoxy and epoxy/low-k interfaces was also observed. Films with low hardness (<5 GPa) displayed a low G_c (<10 J/m²) with an adhesive separation of Si/epoxy, epoxy/low-k, and low-k/Si interfaces. Whereas, films of high hardness (>5 GPa) displayed interfacial energies in excess of 10 J/m² with separation of Si/ epoxy and epoxy/low-k interfaces, thus indicating excellent adhesion between the Si and low-k films. Films with high hardness have less carbon in the system causing it to be more "silicon dioxide" like and exhibiting better adhesion with the Si substrate.

Original language	English
Pages (from-to)	35-43
Number of pages	9
Journal	Microelectronic Engineering
Volume	81
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2004.11.017
Publication status	Published - Jul 2005
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Adhesion
Chemical vapor deposition
Dielectric properties

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10.1016/j.mee.2004.11.017

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title = "Adhesion study of tetra methyl cyclo tetra siloxanes (TMCTS) and tri methyl silane (3MS)-based low-k films",

abstract = "Chemical vapor deposited (CVD) low-k films using tri methyl silane (3MS) precursors and tetra methyl cyclo tetra siloxanes (TMCTS) precursors were studied. Films were deposited by means of four processes, namely, O 2, O2 + He process and CO2, CO2 + O2 process for 3MS and TMCTS precursors, respectively. Interfacial adhesion energy (Gc), of low-k/Si samples, as measured by a 4-point bending test displayed a linear relationship with film hardness and modulus. Fractography studies indicated two possible failure modes with the primary interface of delamination being either at low-k/Si or Si/epoxy interface. In the former, once delamination initiated at the low-k/Si interface, secondary delamination at the Si/epoxy and epoxy/low-k interfaces was also observed. Films with low hardness (<5 GPa) displayed a low Gc (<10 J/m2) with an adhesive separation of Si/epoxy, epoxy/low-k, and low-k/Si interfaces. Whereas, films of high hardness (>5 GPa) displayed interfacial energies in excess of 10 J/m2 with separation of Si/ epoxy and epoxy/low-k interfaces, thus indicating excellent adhesion between the Si and low-k films. Films with high hardness have less carbon in the system causing it to be more {"}silicon dioxide{"} like and exhibiting better adhesion with the Si substrate.",

keywords = "Adhesion, Chemical vapor deposition, Dielectric properties",

author = "J. Widodo and M. Damayanti and Mhaisalkar, {S. G.} and W. Lu and S. Ong and T. Sritharan and Zeng, {K. Y.} and Hsia, {L. C.}",

year = "2005",

month = jul,

doi = "10.1016/j.mee.2004.11.017",

language = "English",

volume = "81",

pages = "35--43",

journal = "Microelectronic Engineering",

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publisher = "Elsevier",

number = "1",

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TY - JOUR

T1 - Adhesion study of tetra methyl cyclo tetra siloxanes (TMCTS) and tri methyl silane (3MS)-based low-k films

AU - Widodo, J.

AU - Damayanti, M.

AU - Mhaisalkar, S. G.

AU - Lu, W.

AU - Ong, S.

AU - Sritharan, T.

AU - Zeng, K. Y.

AU - Hsia, L. C.

PY - 2005/7

Y1 - 2005/7

N2 - Chemical vapor deposited (CVD) low-k films using tri methyl silane (3MS) precursors and tetra methyl cyclo tetra siloxanes (TMCTS) precursors were studied. Films were deposited by means of four processes, namely, O 2, O2 + He process and CO2, CO2 + O2 process for 3MS and TMCTS precursors, respectively. Interfacial adhesion energy (Gc), of low-k/Si samples, as measured by a 4-point bending test displayed a linear relationship with film hardness and modulus. Fractography studies indicated two possible failure modes with the primary interface of delamination being either at low-k/Si or Si/epoxy interface. In the former, once delamination initiated at the low-k/Si interface, secondary delamination at the Si/epoxy and epoxy/low-k interfaces was also observed. Films with low hardness (<5 GPa) displayed a low Gc (<10 J/m2) with an adhesive separation of Si/epoxy, epoxy/low-k, and low-k/Si interfaces. Whereas, films of high hardness (>5 GPa) displayed interfacial energies in excess of 10 J/m2 with separation of Si/ epoxy and epoxy/low-k interfaces, thus indicating excellent adhesion between the Si and low-k films. Films with high hardness have less carbon in the system causing it to be more "silicon dioxide" like and exhibiting better adhesion with the Si substrate.

AB - Chemical vapor deposited (CVD) low-k films using tri methyl silane (3MS) precursors and tetra methyl cyclo tetra siloxanes (TMCTS) precursors were studied. Films were deposited by means of four processes, namely, O 2, O2 + He process and CO2, CO2 + O2 process for 3MS and TMCTS precursors, respectively. Interfacial adhesion energy (Gc), of low-k/Si samples, as measured by a 4-point bending test displayed a linear relationship with film hardness and modulus. Fractography studies indicated two possible failure modes with the primary interface of delamination being either at low-k/Si or Si/epoxy interface. In the former, once delamination initiated at the low-k/Si interface, secondary delamination at the Si/epoxy and epoxy/low-k interfaces was also observed. Films with low hardness (<5 GPa) displayed a low Gc (<10 J/m2) with an adhesive separation of Si/epoxy, epoxy/low-k, and low-k/Si interfaces. Whereas, films of high hardness (>5 GPa) displayed interfacial energies in excess of 10 J/m2 with separation of Si/ epoxy and epoxy/low-k interfaces, thus indicating excellent adhesion between the Si and low-k films. Films with high hardness have less carbon in the system causing it to be more "silicon dioxide" like and exhibiting better adhesion with the Si substrate.

KW - Adhesion

KW - Chemical vapor deposition

KW - Dielectric properties

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ER -

Adhesion study of tetra methyl cyclo tetra siloxanes (TMCTS) and tri methyl silane (3MS)-based low-k films

Abstract

ASJC Scopus Subject Areas

Keywords

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