Abstract
Dual-beam focused ion beam (DB-FIB) system is widely used in the semiconductor industry to prepare cross-sections and transmission electron microscopy (TEM) lamellae, modify semiconductor devices and verify layout. One of the factors that limits its success rate is sample charging, which is caused by a lack of conductive path to discharge the accumulated charges. In this paper, an approach using an insitu micromanipulator was investigated to alleviate the charging effects. With this approach, a simple front side semiconductor device modification was carried out and the corresponding stage current was monitored to correlate to the milling process.
| Original language | English |
|---|---|
| Title of host publication | ISTFA 2015 - Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis |
| Publisher | ASM International |
| Pages | 87-91 |
| Number of pages | 5 |
| ISBN (Electronic) | 162708102X, 9781627081023 |
| Publication status | Published - 2015 |
| Externally published | Yes |
| Event | 41st International Symposium for Testing and Failure Analysis, ISTFA 2015 - Portland, United States Duration: Nov 1 2015 → Nov 5 2015 |
Publication series
| Name | Conference Proceedings from the International Symposium for Testing and Failure Analysis |
|---|---|
| Volume | 2015-January |
Conference
| Conference | 41st International Symposium for Testing and Failure Analysis, ISTFA 2015 |
|---|---|
| Country/Territory | United States |
| City | Portland |
| Period | 11/1/15 → 11/5/15 |
Bibliographical note
Publisher Copyright:Copyright © 2015 ASM International® All rights reserved.
ASJC Scopus Subject Areas
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Safety, Risk, Reliability and Quality