Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers

R. Sim; M. Y. Chan; A. S.W. Wong; P. S. Lee

doi:10.1016/j.orgel.2010.11.003

Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers

R. Sim, M. Y. Chan, A. S.W. Wong, P. S. Lee

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged counter-ions (PSS^-) within the polymer composite. The electro-statically bonded PSS^- within the polymer film segregates at the polymer's interface upon electrical biasing, serving to disrupt current conduction pathways through the polymer by influencing the resonance state of the conducting main chain. By relocation of this PSS^- layer at the polymer interface, electrical conductivity was modulated and an electrical bi-stable device was achieved. The resistive ratio between the ON/OFF states of the device is about 2-3 orders of magnitude, both of which can be read out for up to 500 times with negligible degradation.

Original language	English
Pages (from-to)	185-189
Number of pages	5
Journal	Organic Electronics
Volume	12
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2010.11.003
Publication status	Published - Jan 2011
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Keywords

Electro-migration
Organic memory
PANI
Resistive switching

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10.1016/j.orgel.2010.11.003

Cite this

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title = "Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers",

abstract = "In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged counter-ions (PSS-) within the polymer composite. The electro-statically bonded PSS- within the polymer film segregates at the polymer's interface upon electrical biasing, serving to disrupt current conduction pathways through the polymer by influencing the resonance state of the conducting main chain. By relocation of this PSS- layer at the polymer interface, electrical conductivity was modulated and an electrical bi-stable device was achieved. The resistive ratio between the ON/OFF states of the device is about 2-3 orders of magnitude, both of which can be read out for up to 500 times with negligible degradation.",

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AU - Sim, R.

AU - Chan, M. Y.

AU - Wong, A. S.W.

AU - Lee, P. S.

PY - 2011/1

Y1 - 2011/1

N2 - In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged counter-ions (PSS-) within the polymer composite. The electro-statically bonded PSS- within the polymer film segregates at the polymer's interface upon electrical biasing, serving to disrupt current conduction pathways through the polymer by influencing the resonance state of the conducting main chain. By relocation of this PSS- layer at the polymer interface, electrical conductivity was modulated and an electrical bi-stable device was achieved. The resistive ratio between the ON/OFF states of the device is about 2-3 orders of magnitude, both of which can be read out for up to 500 times with negligible degradation.

AB - In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged counter-ions (PSS-) within the polymer composite. The electro-statically bonded PSS- within the polymer film segregates at the polymer's interface upon electrical biasing, serving to disrupt current conduction pathways through the polymer by influencing the resonance state of the conducting main chain. By relocation of this PSS- layer at the polymer interface, electrical conductivity was modulated and an electrical bi-stable device was achieved. The resistive ratio between the ON/OFF states of the device is about 2-3 orders of magnitude, both of which can be read out for up to 500 times with negligible degradation.

KW - Electro-migration

KW - Organic memory

KW - PANI

KW - Resistive switching

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Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers

Abstract

ASJC Scopus Subject Areas

Keywords

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