Amorphous Pb(Zr, Ti)O3 thin film hydrogen gas sensor

J. Deng; W. Zhu; O. K. Tan; X. Yao

doi:10.1016/S0925-4005(01)00707-9

Amorphous Pb(Zr, Ti)O₃ thin film hydrogen gas sensor

J. Deng^*, W. Zhu, O. K. Tan, X. Yao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The capacitive Pd/lead zirconate titanate (PZT)/Pt devices have been fabricated with amorphous Pb(Zr_x, Ti_1-x)O₃ (x = 0, 30, 53, 65, 90) thin films deposited using the sol-gel spin-coating technology. The PZT films have been characterized by TGA, DTA, X-ray diffraction (XRD), dielectric and electrical properties, and gas sensitivity measurement. It has been shown that the amorphous PZT film can be operative as a hydrogen gas sensor material. The gas sensitivity of Pd/PZT/Pt devices has been systematically studied, and it has been observed that the sensitivity of the turn-on voltage shift in dc I-V curves is as large as 2.3V at 1000ppm hydrogen gas diluted in air. Among the PZT films with different Zr/Ti ratios, it has been investigated that the PZT film with Zr/Ti = 30/70 has the lowest dielectric loss, lowest leakage current, and highest gas sensitivity to hydrogen.

Original language	English
Pages (from-to)	416-420
Number of pages	5
Journal	Sensors and Actuators, B: Chemical
Volume	77
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-4005(01)00707-9
Publication status	Published - Jun 15 2001
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Amorphous
Hydrogen sensor
I-V characteristics
Lead zirconate titanate

Access to Document

10.1016/S0925-4005(01)00707-9

Cite this

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title = "Amorphous Pb(Zr, Ti)O3 thin film hydrogen gas sensor",

abstract = "The capacitive Pd/lead zirconate titanate (PZT)/Pt devices have been fabricated with amorphous Pb(Zrx, Ti1-x)O3 (x = 0, 30, 53, 65, 90) thin films deposited using the sol-gel spin-coating technology. The PZT films have been characterized by TGA, DTA, X-ray diffraction (XRD), dielectric and electrical properties, and gas sensitivity measurement. It has been shown that the amorphous PZT film can be operative as a hydrogen gas sensor material. The gas sensitivity of Pd/PZT/Pt devices has been systematically studied, and it has been observed that the sensitivity of the turn-on voltage shift in dc I-V curves is as large as 2.3V at 1000ppm hydrogen gas diluted in air. Among the PZT films with different Zr/Ti ratios, it has been investigated that the PZT film with Zr/Ti = 30/70 has the lowest dielectric loss, lowest leakage current, and highest gas sensitivity to hydrogen.",

keywords = "Amorphous, Hydrogen sensor, I-V characteristics, Lead zirconate titanate",

author = "J. Deng and W. Zhu and Tan, {O. K.} and X. Yao",

year = "2001",

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doi = "10.1016/S0925-4005(01)00707-9",

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T1 - Amorphous Pb(Zr, Ti)O3 thin film hydrogen gas sensor

AU - Deng, J.

AU - Zhu, W.

AU - Tan, O. K.

AU - Yao, X.

PY - 2001/6/15

Y1 - 2001/6/15

N2 - The capacitive Pd/lead zirconate titanate (PZT)/Pt devices have been fabricated with amorphous Pb(Zrx, Ti1-x)O3 (x = 0, 30, 53, 65, 90) thin films deposited using the sol-gel spin-coating technology. The PZT films have been characterized by TGA, DTA, X-ray diffraction (XRD), dielectric and electrical properties, and gas sensitivity measurement. It has been shown that the amorphous PZT film can be operative as a hydrogen gas sensor material. The gas sensitivity of Pd/PZT/Pt devices has been systematically studied, and it has been observed that the sensitivity of the turn-on voltage shift in dc I-V curves is as large as 2.3V at 1000ppm hydrogen gas diluted in air. Among the PZT films with different Zr/Ti ratios, it has been investigated that the PZT film with Zr/Ti = 30/70 has the lowest dielectric loss, lowest leakage current, and highest gas sensitivity to hydrogen.

AB - The capacitive Pd/lead zirconate titanate (PZT)/Pt devices have been fabricated with amorphous Pb(Zrx, Ti1-x)O3 (x = 0, 30, 53, 65, 90) thin films deposited using the sol-gel spin-coating technology. The PZT films have been characterized by TGA, DTA, X-ray diffraction (XRD), dielectric and electrical properties, and gas sensitivity measurement. It has been shown that the amorphous PZT film can be operative as a hydrogen gas sensor material. The gas sensitivity of Pd/PZT/Pt devices has been systematically studied, and it has been observed that the sensitivity of the turn-on voltage shift in dc I-V curves is as large as 2.3V at 1000ppm hydrogen gas diluted in air. Among the PZT films with different Zr/Ti ratios, it has been investigated that the PZT film with Zr/Ti = 30/70 has the lowest dielectric loss, lowest leakage current, and highest gas sensitivity to hydrogen.

KW - Amorphous

KW - Hydrogen sensor

KW - I-V characteristics

KW - Lead zirconate titanate

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