An electrical study of behaviors of Si nanocrystals distributed in the gate oxide near the oxide/substrate interface of a MOS structure

C. Y. Ng; G. S. Lum; S. C. Tan; T. P. Chen; L. Ding; O. K. Tan; A. Du

doi:10.1016/j.tsf.2005.09.035

An electrical study of behaviors of Si nanocrystals distributed in the gate oxide near the oxide/substrate interface of a MOS structure

C. Y. Ng^*, G. S. Lum, S. C. Tan, T. P. Chen, L. Ding, O. K. Tan, A. Du

^*Corresponding author for this work

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Abstract

In this work, we have investigated the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of silicon nanocrystals (nc-Si) distributed in the gate oxide very near the SiO₂/Si interface of a Metal-Oxide-Semiconductor (MOS) structure. The MOS structure is found to be sensitive to only the positive voltage stress from which charging of the nanocrystals causes a negative flatband voltage shift. At the same time, a large conductance peak is observed due to the energy loss via the neutral-nanocrystal paths near the SiO₂/Si interface. Besides, breakdown of the dielectric film containing the nc-Si is also observed from the G-V characteristic.

Original language	English
Pages (from-to)	32-35
Number of pages	4
Journal	Thin Solid Films
Volume	504
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.09.035
Publication status	Published - May 10 2006

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Charging
MOS
Nanostructures

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10.1016/j.tsf.2005.09.035

Cite this

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title = "An electrical study of behaviors of Si nanocrystals distributed in the gate oxide near the oxide/substrate interface of a MOS structure",

abstract = "In this work, we have investigated the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of silicon nanocrystals (nc-Si) distributed in the gate oxide very near the SiO2/Si interface of a Metal-Oxide-Semiconductor (MOS) structure. The MOS structure is found to be sensitive to only the positive voltage stress from which charging of the nanocrystals causes a negative flatband voltage shift. At the same time, a large conductance peak is observed due to the energy loss via the neutral-nanocrystal paths near the SiO2/Si interface. Besides, breakdown of the dielectric film containing the nc-Si is also observed from the G-V characteristic.",

keywords = "Charging, MOS, Nanostructures",

author = "Ng, {C. Y.} and Lum, {G. S.} and Tan, {S. C.} and Chen, {T. P.} and L. Ding and Tan, {O. K.} and A. Du",

year = "2006",

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doi = "10.1016/j.tsf.2005.09.035",

language = "English",

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TY - JOUR

T1 - An electrical study of behaviors of Si nanocrystals distributed in the gate oxide near the oxide/substrate interface of a MOS structure

AU - Ng, C. Y.

AU - Lum, G. S.

AU - Tan, S. C.

AU - Chen, T. P.

AU - Ding, L.

AU - Tan, O. K.

AU - Du, A.

PY - 2006/5/10

Y1 - 2006/5/10

N2 - In this work, we have investigated the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of silicon nanocrystals (nc-Si) distributed in the gate oxide very near the SiO2/Si interface of a Metal-Oxide-Semiconductor (MOS) structure. The MOS structure is found to be sensitive to only the positive voltage stress from which charging of the nanocrystals causes a negative flatband voltage shift. At the same time, a large conductance peak is observed due to the energy loss via the neutral-nanocrystal paths near the SiO2/Si interface. Besides, breakdown of the dielectric film containing the nc-Si is also observed from the G-V characteristic.

AB - In this work, we have investigated the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of silicon nanocrystals (nc-Si) distributed in the gate oxide very near the SiO2/Si interface of a Metal-Oxide-Semiconductor (MOS) structure. The MOS structure is found to be sensitive to only the positive voltage stress from which charging of the nanocrystals causes a negative flatband voltage shift. At the same time, a large conductance peak is observed due to the energy loss via the neutral-nanocrystal paths near the SiO2/Si interface. Besides, breakdown of the dielectric film containing the nc-Si is also observed from the G-V characteristic.

KW - Charging

KW - MOS

KW - Nanostructures

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SP - 32

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

An electrical study of behaviors of Si nanocrystals distributed in the gate oxide near the oxide/substrate interface of a MOS structure

Abstract

ASJC Scopus Subject Areas

Keywords

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