An electrical study of behaviors of Si nanocrystals distributed in the gate oxide near the oxide/substrate interface of a MOS structure

C. Y. Ng*, G. S. Lum, S. C. Tan, T. P. Chen, L. Ding, O. K. Tan, A. Du

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Fingerprint

Dive into the research topics of 'An electrical study of behaviors of Si nanocrystals distributed in the gate oxide near the oxide/substrate interface of a MOS structure'. Together they form a unique fingerprint.

Material Science

Keyphrases

Physics

Engineering