An Epitaxial Ferroelectric Tunnel Junction on Silicon

Zhipeng Li; Xiao Guo; Hui Bin Lu; Zaoli Zhang; Dongsheng Song; Shaobo Cheng; Michel Bosman; Jing Zhu; Zhili Dong; Weiguang Zhu

doi:10.1002/adma.201402527

An Epitaxial Ferroelectric Tunnel Junction on Silicon

Zhipeng Li, Xiao Guo, Hui Bin Lu^*, Zaoli Zhang, Dongsheng Song, Shaobo Cheng, Michel Bosman, Jing Zhu, Zhili Dong, Weiguang Zhu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO₃ barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.

Original language	English
Pages (from-to)	7185-7189
Number of pages	5
Journal	Advanced Materials
Volume	26
Issue number	42
DOIs	https://doi.org/10.1002/adma.201402527
Publication status	Published - Nov 1 2014
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ASJC Scopus Subject Areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Keywords

epitaxial growth
ferroelectric tunnel junction
non-volatile memory
pulsed laser deposition
tunneling electroresistance

Access to Document

10.1002/adma.201402527

Cite this

@article{115b402da88e477fbdb492a7c8ffa82e,

title = "An Epitaxial Ferroelectric Tunnel Junction on Silicon",

abstract = "Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.",

keywords = "epitaxial growth, ferroelectric tunnel junction, non-volatile memory, pulsed laser deposition, tunneling electroresistance",

author = "Zhipeng Li and Xiao Guo and Lu, {Hui Bin} and Zaoli Zhang and Dongsheng Song and Shaobo Cheng and Michel Bosman and Jing Zhu and Zhili Dong and Weiguang Zhu",

note = "Publisher Copyright: {\textcopyright} 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2014",

month = nov,

day = "1",

doi = "10.1002/adma.201402527",

language = "English",

volume = "26",

pages = "7185--7189",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "42",

}

TY - JOUR

T1 - An Epitaxial Ferroelectric Tunnel Junction on Silicon

AU - Li, Zhipeng

AU - Guo, Xiao

AU - Lu, Hui Bin

AU - Zhang, Zaoli

AU - Song, Dongsheng

AU - Cheng, Shaobo

AU - Bosman, Michel

AU - Zhu, Jing

AU - Dong, Zhili

AU - Zhu, Weiguang

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.

AB - Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.

KW - epitaxial growth

KW - ferroelectric tunnel junction

KW - non-volatile memory

KW - pulsed laser deposition

KW - tunneling electroresistance

UR - http://www.scopus.com/inward/record.url?scp=84909951865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84909951865&partnerID=8YFLogxK

U2 - 10.1002/adma.201402527

DO - 10.1002/adma.201402527

M3 - Article

C2 - 25200550

AN - SCOPUS:84909951865

SN - 0935-9648

VL - 26

SP - 7185

EP - 7189

JO - Advanced Materials

JF - Advanced Materials

IS - 42

ER -

An Epitaxial Ferroelectric Tunnel Junction on Silicon

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this