Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

D. Mangelinck; P. S. Lee; T. Osipowitcz; K. L. Pey

doi:10.1016/j.nimb.2003.08.040

Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

D. Mangelinck^*, P. S. Lee, T. Osipowitcz, K. L. Pey

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.

Original language	English
Pages (from-to)	495-500
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	215
Issue number	3-4
DOIs	https://doi.org/10.1016/j.nimb.2003.08.040
Publication status	Published - Feb 2004
Externally published	Yes

ASJC Scopus Subject Areas

Nuclear and High Energy Physics
Instrumentation

Keywords

Characterization
MOS
Rutherford backscattering spectrometry
Silicide
Sub-micron devices

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10.1016/j.nimb.2003.08.040

Cite this

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title = "Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry",

abstract = "A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.",

keywords = "Characterization, MOS, Rutherford backscattering spectrometry, Silicide, Sub-micron devices",

author = "D. Mangelinck and Lee, {P. S.} and T. Osipowitcz and Pey, {K. L.}",

year = "2004",

month = feb,

doi = "10.1016/j.nimb.2003.08.040",

language = "English",

volume = "215",

pages = "495--500",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "3-4",

}

Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. / Mangelinck, D.; Lee, P. S.; Osipowitcz, T. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 215, No. 3-4, 02.2004, p. 495-500.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

AU - Mangelinck, D.

AU - Lee, P. S.

AU - Osipowitcz, T.

AU - Pey, K. L.

PY - 2004/2

Y1 - 2004/2

N2 - A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.

AB - A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.

KW - Characterization

KW - MOS

KW - Rutherford backscattering spectrometry

KW - Silicide

KW - Sub-micron devices

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UR - http://www.scopus.com/inward/citedby.url?scp=0942267218&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2003.08.040

DO - 10.1016/j.nimb.2003.08.040

M3 - Article

AN - SCOPUS:0942267218

SN - 0168-583X

VL - 215

SP - 495

EP - 500

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 3-4

ER -

Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

Abstract

ASJC Scopus Subject Areas

Keywords

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