Analytical modeling of reservoir effect on electromigration in Cu interconnects

Zhenghao Gan; A. M. Gusak; W. Shao; Zhong Chen; S. G. Mhaisalkar; T. Zaporozhets; K. N. Tu

doi:10.1557/jmr.2007.0001

Analytical modeling of reservoir effect on electromigration in Cu interconnects

Zhenghao Gan^*, A. M. Gusak, W. Shao, Zhong Chen, S. G. Mhaisalkar, T. Zaporozhets, K. N. Tu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model.

Original language	English
Pages (from-to)	152-156
Number of pages	5
Journal	Journal of Materials Research
Volume	22
Issue number	1
DOIs	https://doi.org/10.1557/jmr.2007.0001
Publication status	Published - Jan 2007
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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abstract = "Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model.",

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AU - Gan, Zhenghao

AU - Gusak, A. M.

AU - Shao, W.

AU - Chen, Zhong

AU - Mhaisalkar, S. G.

AU - Zaporozhets, T.

AU - Tu, K. N.

PY - 2007/1

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N2 - Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model.

AB - Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model.

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Analytical modeling of reservoir effect on electromigration in Cu interconnects

Abstract

ASJC Scopus Subject Areas

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