Annealing effect on electron field-emission properties of diamond-like nanocomposite films

Xing Zhao Ding; Dong Sheng Mao; B. K. Tay; S. P. Lau; J. R. Shi; Y. J. Li; Z. Sun; X. Shi; H. S. Tan; Fu Min Zhang; Xiang Huai Liu

doi:10.1063/1.1319166

Annealing effect on electron field-emission properties of diamond-like nanocomposite films

Xing Zhao Ding^*, Dong Sheng Mao, B. K. Tay, S. P. Lau, J. R. Shi, Y. J. Li, Z. Sun, X. Shi, H. S. Tan, Fu Min Zhang, Xiang Huai Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The field-emission properties of a Si-O bond-containing diamond-like nanocomposite (DLN) film were investigated as a function of annealing temperature (T_a). It was found that with increasing T_a the emission threshold voltage decreased gradually. After annealing at T_a = 500°C, the emission current decreased significantly. At T_a = 700°C, however, the field-emission properties of the DLN film improved greatly, the threshold field became very low (∼1.5 V/μm), and the emission current rather high (e.g., ∼2.3 μA/mm² at an electric field of 22 V/μm). The structural variation of the film after annealing at different temperatures was monitored by ultraviolet Raman spectroscopy, spectroscopic ellipsometry, atomic-force microscopy, and electrical resistivity measurements. By using a three-step model: (i) electron injection from the substrate, (ii) electron transport through the film, and (iii) electron emission at the film surface, the annealing effect on field-emission properties of the DLN film were qualitatively interpreted. It is believed that the threshold electric field is determined by the local electron affinity on the film surface, while the emission current is mainly limited by electron injection and transport processes.

Original language	English
Pages (from-to)	5087-5092
Number of pages	6
Journal	Journal of Applied Physics
Volume	88
Issue number	9
DOIs	https://doi.org/10.1063/1.1319166
Publication status	Published - Nov 1 2000
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy

Access to Document

10.1063/1.1319166

Cite this

@article{129c86a21fd0489ab20bb79150c2a72a,

title = "Annealing effect on electron field-emission properties of diamond-like nanocomposite films",

abstract = "The field-emission properties of a Si-O bond-containing diamond-like nanocomposite (DLN) film were investigated as a function of annealing temperature (Ta). It was found that with increasing Ta the emission threshold voltage decreased gradually. After annealing at Ta = 500°C, the emission current decreased significantly. At Ta = 700°C, however, the field-emission properties of the DLN film improved greatly, the threshold field became very low (∼1.5 V/μm), and the emission current rather high (e.g., ∼2.3 μA/mm2 at an electric field of 22 V/μm). The structural variation of the film after annealing at different temperatures was monitored by ultraviolet Raman spectroscopy, spectroscopic ellipsometry, atomic-force microscopy, and electrical resistivity measurements. By using a three-step model: (i) electron injection from the substrate, (ii) electron transport through the film, and (iii) electron emission at the film surface, the annealing effect on field-emission properties of the DLN film were qualitatively interpreted. It is believed that the threshold electric field is determined by the local electron affinity on the film surface, while the emission current is mainly limited by electron injection and transport processes.",

author = "Ding, {Xing Zhao} and Mao, {Dong Sheng} and Tay, {B. K.} and Lau, {S. P.} and Shi, {J. R.} and Li, {Y. J.} and Z. Sun and X. Shi and Tan, {H. S.} and Zhang, {Fu Min} and Liu, {Xiang Huai}",

year = "2000",

month = nov,

day = "1",

doi = "10.1063/1.1319166",

language = "English",

volume = "88",

pages = "5087--5092",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Annealing effect on electron field-emission properties of diamond-like nanocomposite films

AU - Ding, Xing Zhao

AU - Mao, Dong Sheng

AU - Tay, B. K.

AU - Lau, S. P.

AU - Shi, J. R.

AU - Li, Y. J.

AU - Sun, Z.

AU - Shi, X.

AU - Tan, H. S.

AU - Zhang, Fu Min

AU - Liu, Xiang Huai

PY - 2000/11/1

Y1 - 2000/11/1

N2 - The field-emission properties of a Si-O bond-containing diamond-like nanocomposite (DLN) film were investigated as a function of annealing temperature (Ta). It was found that with increasing Ta the emission threshold voltage decreased gradually. After annealing at Ta = 500°C, the emission current decreased significantly. At Ta = 700°C, however, the field-emission properties of the DLN film improved greatly, the threshold field became very low (∼1.5 V/μm), and the emission current rather high (e.g., ∼2.3 μA/mm2 at an electric field of 22 V/μm). The structural variation of the film after annealing at different temperatures was monitored by ultraviolet Raman spectroscopy, spectroscopic ellipsometry, atomic-force microscopy, and electrical resistivity measurements. By using a three-step model: (i) electron injection from the substrate, (ii) electron transport through the film, and (iii) electron emission at the film surface, the annealing effect on field-emission properties of the DLN film were qualitatively interpreted. It is believed that the threshold electric field is determined by the local electron affinity on the film surface, while the emission current is mainly limited by electron injection and transport processes.

AB - The field-emission properties of a Si-O bond-containing diamond-like nanocomposite (DLN) film were investigated as a function of annealing temperature (Ta). It was found that with increasing Ta the emission threshold voltage decreased gradually. After annealing at Ta = 500°C, the emission current decreased significantly. At Ta = 700°C, however, the field-emission properties of the DLN film improved greatly, the threshold field became very low (∼1.5 V/μm), and the emission current rather high (e.g., ∼2.3 μA/mm2 at an electric field of 22 V/μm). The structural variation of the film after annealing at different temperatures was monitored by ultraviolet Raman spectroscopy, spectroscopic ellipsometry, atomic-force microscopy, and electrical resistivity measurements. By using a three-step model: (i) electron injection from the substrate, (ii) electron transport through the film, and (iii) electron emission at the film surface, the annealing effect on field-emission properties of the DLN film were qualitatively interpreted. It is believed that the threshold electric field is determined by the local electron affinity on the film surface, while the emission current is mainly limited by electron injection and transport processes.

UR - http://www.scopus.com/inward/record.url?scp=0343378261&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343378261&partnerID=8YFLogxK

U2 - 10.1063/1.1319166

DO - 10.1063/1.1319166

M3 - Article

AN - SCOPUS:0343378261

SN - 0021-8979

VL - 88

SP - 5087

EP - 5092

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Annealing effect on electron field-emission properties of diamond-like nanocomposite films

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this