Annealing temperature effect on field emission of silicon emitter arrays with sol-gel (Ba0.65Sr0.35)TiO3 coatings

H. Lu; X. F. Chen; W. G. Zhu; J. S. Pan; O. K. Tan

doi:10.1080/00150190600695941

Annealing temperature effect on field emission of silicon emitter arrays with sol-gel (Ba_0.65Sr_0.35)TiO₃ coatings

H. Lu, X. F. Chen, W. G. Zhu, J. S. Pan, O. K. Tan

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Ba_0.65Sr_0.35TiO₃ (BST) thin films have been fabricated on silicon field emitter arrays (FEAs) using sol-gel coating for electron emission applications. The BST coatings exhibit the perovskite structure when annealed between 650 and 700°C, and an interfacial reaction occurs when annealed above 750°C. The threshold electric field is lowered from 36 V/μm for bare silicon tips to 19 V/μm for BST-coated silicon tips. The oxygen vacancy concentration increases for BST thin films annealed from 600 to 750°C, and decreases above 750°C, leading to the Fermi energy shift. The electron emission behavior is correlated to both the microstructure and electronic structure of the BST thin films.

Original language	English
Pages (from-to)	253-261
Number of pages	9
Journal	Ferroelectrics
Volume	334
Issue number	1 PART 2
DOIs	https://doi.org/10.1080/00150190600695941
Publication status	Published - 2006
Externally published	Yes
Event	11th International Meeting on Ferroelectricity, IMF-11 - Iguassu Falls, Brazil Duration: Sept 5 2005 → Sept 9 2005

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Keywords

BST thin film
electron emission
sol-gel

Access to Document

10.1080/00150190600695941

Cite this

@article{99268ff3b5b84fdfbd9c2f148d853034,

title = "Annealing temperature effect on field emission of silicon emitter arrays with sol-gel (Ba0.65Sr0.35)TiO3 coatings",

abstract = "Ba0.65Sr0.35TiO3 (BST) thin films have been fabricated on silicon field emitter arrays (FEAs) using sol-gel coating for electron emission applications. The BST coatings exhibit the perovskite structure when annealed between 650 and 700°C, and an interfacial reaction occurs when annealed above 750°C. The threshold electric field is lowered from 36 V/μm for bare silicon tips to 19 V/μm for BST-coated silicon tips. The oxygen vacancy concentration increases for BST thin films annealed from 600 to 750°C, and decreases above 750°C, leading to the Fermi energy shift. The electron emission behavior is correlated to both the microstructure and electronic structure of the BST thin films.",

keywords = "BST thin film, electron emission, sol-gel",

author = "H. Lu and Chen, {X. F.} and Zhu, {W. G.} and Pan, {J. S.} and Tan, {O. K.}",

year = "2006",

doi = "10.1080/00150190600695941",

language = "English",

volume = "334",

pages = "253--261",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1 PART 2",

note = "11th International Meeting on Ferroelectricity, IMF-11 ; Conference date: 05-09-2005 Through 09-09-2005",

}

TY - JOUR

T1 - Annealing temperature effect on field emission of silicon emitter arrays with sol-gel (Ba0.65Sr0.35)TiO3 coatings

AU - Lu, H.

AU - Chen, X. F.

AU - Zhu, W. G.

AU - Pan, J. S.

AU - Tan, O. K.

PY - 2006

Y1 - 2006

N2 - Ba0.65Sr0.35TiO3 (BST) thin films have been fabricated on silicon field emitter arrays (FEAs) using sol-gel coating for electron emission applications. The BST coatings exhibit the perovskite structure when annealed between 650 and 700°C, and an interfacial reaction occurs when annealed above 750°C. The threshold electric field is lowered from 36 V/μm for bare silicon tips to 19 V/μm for BST-coated silicon tips. The oxygen vacancy concentration increases for BST thin films annealed from 600 to 750°C, and decreases above 750°C, leading to the Fermi energy shift. The electron emission behavior is correlated to both the microstructure and electronic structure of the BST thin films.

AB - Ba0.65Sr0.35TiO3 (BST) thin films have been fabricated on silicon field emitter arrays (FEAs) using sol-gel coating for electron emission applications. The BST coatings exhibit the perovskite structure when annealed between 650 and 700°C, and an interfacial reaction occurs when annealed above 750°C. The threshold electric field is lowered from 36 V/μm for bare silicon tips to 19 V/μm for BST-coated silicon tips. The oxygen vacancy concentration increases for BST thin films annealed from 600 to 750°C, and decreases above 750°C, leading to the Fermi energy shift. The electron emission behavior is correlated to both the microstructure and electronic structure of the BST thin films.

KW - BST thin film

KW - electron emission

KW - sol-gel

UR - http://www.scopus.com/inward/record.url?scp=34547145251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547145251&partnerID=8YFLogxK

U2 - 10.1080/00150190600695941

DO - 10.1080/00150190600695941

M3 - Conference article

AN - SCOPUS:34547145251

SN - 0015-0193

VL - 334

SP - 253

EP - 261

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 2

T2 - 11th International Meeting on Ferroelectricity, IMF-11

Y2 - 5 September 2005 through 9 September 2005

ER -