Applications of scanning optical microscopy in materials science to detect bulk microdefects in semiconductors

P. Török; L. Mule'Stagno

doi:10.1046/j.1365-2818.1997.2420800.x

Applications of scanning optical microscopy in materials science to detect bulk microdefects in semiconductors

P. Török^*, L. Mule'Stagno

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

26 Citations (Scopus)

Abstract

We review the application of scanning optical microscopy to bulk microdefect detection in semiconductor materials. After an extensive literature review we summarize theoretical aspects of the scanning infra-red microscope and describe the theory of contrast formation. We also show experimental examples of scanning infra-red images taken by different modes of the microscope and give an experimental confirmation of the contrast theory.

Original language	English
Pages (from-to)	1-16
Number of pages	16
Journal	Journal of Microscopy
Volume	188
Issue number	1
DOIs	https://doi.org/10.1046/j.1365-2818.1997.2420800.x
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus Subject Areas

Pathology and Forensic Medicine
Histology

Keywords

Bulk defects
Materials science applications
Scanning infra-red microscopy

Access to Document

10.1046/j.1365-2818.1997.2420800.x

Cite this

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title = "Applications of scanning optical microscopy in materials science to detect bulk microdefects in semiconductors",

abstract = "We review the application of scanning optical microscopy to bulk microdefect detection in semiconductor materials. After an extensive literature review we summarize theoretical aspects of the scanning infra-red microscope and describe the theory of contrast formation. We also show experimental examples of scanning infra-red images taken by different modes of the microscope and give an experimental confirmation of the contrast theory.",

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AU - Török, P.

AU - Mule'Stagno, L.

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AB - We review the application of scanning optical microscopy to bulk microdefect detection in semiconductor materials. After an extensive literature review we summarize theoretical aspects of the scanning infra-red microscope and describe the theory of contrast formation. We also show experimental examples of scanning infra-red images taken by different modes of the microscope and give an experimental confirmation of the contrast theory.

KW - Bulk defects

KW - Materials science applications

KW - Scanning infra-red microscopy

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Applications of scanning optical microscopy in materials science to detect bulk microdefects in semiconductors

Abstract

ASJC Scopus Subject Areas

Keywords

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