Abstract
Identification of individual atoms and examination of their electronic properties in materials are the ultimate goal of all microscopy-based analytical techniques. Here, we demonstrate successful single-atom imaging and spectroscopy in low-dimensional materials using (scanning) transmission electron microscopy together with electron energy-loss spectroscopy (EELS). Edges and point defects in single-layered materials such as graphene, hexagonal boron nitride and WS2 nanoribbons are investigated by annular dark-field imaging and EELS fine-structure analysis. Individual dopant atoms are unambiguously identified in nano-peapods. It is noteworthy that irradiation damage and specimen contamination even at the single-atom level are crucial issues in these experiments.
Original language | English |
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Pages (from-to) | 285-291 |
Number of pages | 7 |
Journal | Journal of Electron Microscopy |
Volume | 61 |
Issue number | 5 |
DOIs | |
Publication status | Published - Oct 2012 |
Externally published | Yes |
ASJC Scopus Subject Areas
- Instrumentation
Keywords
- defects
- EELS
- graphene
- low-dimensional materials
- STEM