Atomic Plane-Vacancy Engineering of Transition-Metal Dichalcogenides with Enhanced Hydrogen Evolution Capability

Cong Wei, Wenzhuo Wu, Hao Li, Xiangcheng Lin, Tong Wu, Yida Zhang, Quan Xu*, Lipeng Zhang, Yonghao Zhu, Xinan Yang, Zheng Liu, Qun Xu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)

Abstract

Introducing anion vacancies on two-dimensional transition-metal dichalcogenides (TMDs) would significantly improve their catalytic activity. In this work, we proposed a solid-phase reduction (SPR) strategy to simultaneously achieve efficient exfoliation and controlled generation of chalcogen vacancies on TMDs. Consecutive sulfur vacancies were successfully created on the basal plane of the bulk MoS2 and WS2, and their interlamellar distances were distinctly expanded after the SPR treatment (about 16%), which can be conveniently exfoliated by only gentle shaking. The S-vacancy significantly increases the hydrogen-evolution reaction activity of the MoS2 and WS2 nanosheets, with overpotential of -238 and -241 mV at 10 mA cm-2, respectively. We anticipate that our SPR strategy will supply a general platform for the development of TMD-based electrocatalysts for industrial water splitting and hydrogen production in the near future.

Original languageEnglish
Pages (from-to)25264-25270
Number of pages7
JournalACS Applied Materials and Interfaces
Volume11
Issue number28
DOIs
Publication statusPublished - Jun 21 2019
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

ASJC Scopus Subject Areas

  • General Materials Science

Keywords

  • hydrogen-evolution reaction
  • scalable exfoliation
  • solid-phase reduction
  • transition-metal dichalcogenides
  • vacancy engineering

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