Abstract
Complex oxide thin-film heterostructures often exhibit magnetic properties different from those known for bulk constituents. This is due to the altered local structural and electronic environment at the interfaces, which affects the exchange coupling and magnetic ordering. The emergent magnetism at oxide interfaces can be controlled by ferroelectric polarization and has a strong effect on spin-dependent transport properties of oxide heterostructures, including magnetic and ferroelectric tunnel junctions. Here, using prototype La 2/3 Sr 1/3 MnO 3 /BaTiO 3 heterostructures, we demonstrate that ferroelectric polarization of BaTiO 3 controls the orbital hybridization and magnetism at heterointerfaces. We observe changes in the enhanced orbital occupancy and significant charge redistribution across the heterointerfaces, affecting the spin and orbital magnetic moments of the interfacial Mn and Ti atoms. Importantly, we find that the exchange coupling between Mn and Ti atoms across the interface is tuned by ferroelectric polarization from ferromagnetic to antiferromagnetic. Our findings provide a viable route to electrically control complex magnetic configurations at artificial multiferroic interfaces, taking a step toward low-power spintronics.
Original language | English |
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Pages (from-to) | 3057-3065 |
Number of pages | 9 |
Journal | Nano Letters |
Volume | 19 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 8 2019 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2019 American Chemical Society.
ASJC Scopus Subject Areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering
Keywords
- artificial multiferroic interface
- charge transfer
- Ferroelectric field effect
- interfacial magnetic coupling
- orbital anisotropy
- orbital hybridization