Auger-type hole trapping process at green emission centers of ZnO Nanowires

Tze Chien Sum, Mingjie Li, Guichuan Xing, Tom Wu, Guozhong Xing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The origins of the green emission (GE) from ZnO nanostructures remain highly controversial despite extensive studies. Herein, transient absorption spectroscopy (TAS) revealed a small Stokes shift of ∼180 meV between the GE-centers (located at ∼0.7 eV above the valence band) and the GE peak - yielding the first experimental evidence of the GE originating from charge transitions of the ZnO di-vacancies proposed recently in density functional calculations. TAS also uncovered an ultrafast Auger-type hole-trapping process to VZnO that occurs in a sub-ps timescale.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period6/9/136/14/13

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Auger-type hole trapping process at green emission centers of ZnO Nanowires'. Together they form a unique fingerprint.

Cite this