Auger-type hole trapping process at green emission centers of ZnO nanowires

Tze Chien Sum*, Mingjie Li, Guichuan Xing, Tom Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The origins of the green emission (GE) from ZnO nanostructures remain highly controversial despite extensive studies. Herein, transient absorption spectroscopy (TAS) revealed a small Stokes shift of ~180 meV between the GE-centers (located at ~0.7 eV above the valence band) and the GE peak - yielding the first experimental evidence of the GE originating from charge transitions of the ZnO di-vacancies proposed recently in density functional calculations. TAS also uncovered an ultrafast Auger-type holetrapping process to ZnO V that occurs in a sub-ps timescale.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science, CLEO:QELS FS 2013
PagesQM3D.3
Publication statusPublished - 2013
Externally publishedYes
EventCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

NameCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013

Conference

ConferenceCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period6/9/136/14/13

ASJC Scopus Subject Areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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