Augmented one dimensional nanostructured sensor elements

Pooi See Lee; Nandan Singh

doi:10.1109/ICSENS.2012.6411431

Augmented one dimensional nanostructured sensor elements

Pooi See Lee^*, Nandan Singh

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper illustrates the novel approaches to augment the sensing behavior of In₂O₃ base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO₂ gas at room temperature sensing tests. Surface functionalization of the In ₂O₃ through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance.

Original language	English
Title of host publication	IEEE SENSORS 2012 - Proceedings
DOIs	https://doi.org/10.1109/ICSENS.2012.6411431
Publication status	Published - 2012
Externally published	Yes
Event	11th IEEE SENSORS 2012 Conference - Taipei, Taiwan, Province of China Duration: Oct 28 2012 → Oct 31 2012

Publication series

Name	Proceedings of IEEE Sensors

Conference

Conference	11th IEEE SENSORS 2012 Conference
Country/Territory	Taiwan, Province of China
City	Taipei
Period	10/28/12 → 10/31/12

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

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10.1109/ICSENS.2012.6411431

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title = "Augmented one dimensional nanostructured sensor elements",

abstract = "This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO2 gas at room temperature sensing tests. Surface functionalization of the In 2O3 through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance.",

author = "Lee, {Pooi See} and Nandan Singh",

year = "2012",

doi = "10.1109/ICSENS.2012.6411431",

language = "English",

isbn = "9781457717659",

series = "Proceedings of IEEE Sensors",

booktitle = "IEEE SENSORS 2012 - Proceedings",

note = "11th IEEE SENSORS 2012 Conference ; Conference date: 28-10-2012 Through 31-10-2012",

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AU - Lee, Pooi See

AU - Singh, Nandan

PY - 2012

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N2 - This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO2 gas at room temperature sensing tests. Surface functionalization of the In 2O3 through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance.

AB - This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO2 gas at room temperature sensing tests. Surface functionalization of the In 2O3 through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance.

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DO - 10.1109/ICSENS.2012.6411431

M3 - Conference contribution

AN - SCOPUS:84873978074

SN - 9781457717659

T3 - Proceedings of IEEE Sensors

BT - IEEE SENSORS 2012 - Proceedings

T2 - 11th IEEE SENSORS 2012 Conference

Y2 - 28 October 2012 through 31 October 2012

ER -

Augmented one dimensional nanostructured sensor elements

Abstract

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