Bilayer BaSnO3 thin film transistors on silicon substrates

Wenhan Du*, Anh Chien Nguyen, Rohit Abraham John, Jing Jing Yang, Mohit Rameshchandra Kulkarni, Edgar R. López-Mena, Amoolya Nirmal, Nripan Mathews

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Barium tin oxide BaSnO3 (BSO) is a novel wide-bandgap semiconducting material with high electron mobility and is considered as a promising alternative to indium-containing amorphous oxide semiconductors. Herein, high-performance BSO thin film transistors (TFTs) on non-epitaxial substrates by forming a unique bilayer structure via sputtering are demonstrated. Synergistic control over the deposition rate and post-annealing temperatures result in precise formation and modulation of oxygen vacancies, culminating in insulating and semiconducting BaSnO3 fractions within the bilayer structure. These devices exhibit thermally activated charge transport properties with a field effect mobility of 0.75 cm2 V-1 s-1 and an Ion/Ioff ratio of 104. These novel BSO TFT devices are stable for at least 20 days with moderate storage conditions (room temperature, 30-40% humidity, air conditions), thus paving the way for the facile fabrication of high-performance indium-free switching devices.

Original languageEnglish
Pages (from-to)5231-5238
Number of pages8
JournalJournal of Materials Chemistry C
Volume8
Issue number15
DOIs
Publication statusPublished - Apr 21 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
This journal is © The Royal Society of Chemistry.

ASJC Scopus Subject Areas

  • General Chemistry
  • Materials Chemistry

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