Bottom gate organic thin-film transistors fabricated by ultraviolet transfer embossing with improved device performance

Shi Jingsheng; Mary B. Chan-Park; Chang Ming Li

doi:10.1016/j.orgel.2008.12.012

Bottom gate organic thin-film transistors fabricated by ultraviolet transfer embossing with improved device performance

Shi Jingsheng, Mary B. Chan-Park, Chang Ming Li^*

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Ultraviolet transfer embossing is optimized to fabricate bottom gate organic thin-film transistors (OTFTs) on flexible plastic substrates, achieving significant improved device performance (μ = 0.01-0.02cm²/Vs; on/off ratio = 10⁴) compared with the top gate OTFTs made previously by the same method (μ = 0.001-0.002 cm²/Vs; on/off ratio = 10²). The performance improvement can be ascribed to the reduced roughness of the dielectric-semiconductor interface (R_rms = 0.852 nm) and thermally cross-linked PVP dielectric which leads to reduced gate leakage current and transistor off current in the bottom-gated configuration. This technique brings an alternative great opportunity to the high-volume production of economic printable large-area OTFT-based flexible electronics and sensors.

Original language	English
Pages (from-to)	396-401
Number of pages	6
Journal	Organic Electronics
Volume	10
Issue number	3
DOIs	https://doi.org/10.1016/j.orgel.2008.12.012
Publication status	Published - May 2009
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Keywords

Cross-linking
Dielectric-semiconductor interface
Flexible
Large-area
Organic field-effect transistors
Organic thin-film transistors
Printable
Transfer embossing
UV embossing

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10.1016/j.orgel.2008.12.012

Cite this

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title = "Bottom gate organic thin-film transistors fabricated by ultraviolet transfer embossing with improved device performance",

abstract = "Ultraviolet transfer embossing is optimized to fabricate bottom gate organic thin-film transistors (OTFTs) on flexible plastic substrates, achieving significant improved device performance (μ = 0.01-0.02cm2/Vs; on/off ratio = 104) compared with the top gate OTFTs made previously by the same method (μ = 0.001-0.002 cm2/Vs; on/off ratio = 102). The performance improvement can be ascribed to the reduced roughness of the dielectric-semiconductor interface (Rrms = 0.852 nm) and thermally cross-linked PVP dielectric which leads to reduced gate leakage current and transistor off current in the bottom-gated configuration. This technique brings an alternative great opportunity to the high-volume production of economic printable large-area OTFT-based flexible electronics and sensors.",

keywords = "Cross-linking, Dielectric-semiconductor interface, Flexible, Large-area, Organic field-effect transistors, Organic thin-film transistors, Printable, Transfer embossing, UV embossing",

author = "Shi Jingsheng and Chan-Park, \{Mary B.\} and Li, \{Chang Ming\}",

year = "2009",

month = may,

doi = "10.1016/j.orgel.2008.12.012",

language = "English",

volume = "10",

pages = "396--401",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier",

number = "3",

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T1 - Bottom gate organic thin-film transistors fabricated by ultraviolet transfer embossing with improved device performance

AU - Jingsheng, Shi

AU - Chan-Park, Mary B.

AU - Li, Chang Ming

PY - 2009/5

Y1 - 2009/5

N2 - Ultraviolet transfer embossing is optimized to fabricate bottom gate organic thin-film transistors (OTFTs) on flexible plastic substrates, achieving significant improved device performance (μ = 0.01-0.02cm2/Vs; on/off ratio = 104) compared with the top gate OTFTs made previously by the same method (μ = 0.001-0.002 cm2/Vs; on/off ratio = 102). The performance improvement can be ascribed to the reduced roughness of the dielectric-semiconductor interface (Rrms = 0.852 nm) and thermally cross-linked PVP dielectric which leads to reduced gate leakage current and transistor off current in the bottom-gated configuration. This technique brings an alternative great opportunity to the high-volume production of economic printable large-area OTFT-based flexible electronics and sensors.

AB - Ultraviolet transfer embossing is optimized to fabricate bottom gate organic thin-film transistors (OTFTs) on flexible plastic substrates, achieving significant improved device performance (μ = 0.01-0.02cm2/Vs; on/off ratio = 104) compared with the top gate OTFTs made previously by the same method (μ = 0.001-0.002 cm2/Vs; on/off ratio = 102). The performance improvement can be ascribed to the reduced roughness of the dielectric-semiconductor interface (Rrms = 0.852 nm) and thermally cross-linked PVP dielectric which leads to reduced gate leakage current and transistor off current in the bottom-gated configuration. This technique brings an alternative great opportunity to the high-volume production of economic printable large-area OTFT-based flexible electronics and sensors.

KW - Cross-linking

KW - Dielectric-semiconductor interface

KW - Flexible

KW - Large-area

KW - Organic field-effect transistors

KW - Organic thin-film transistors

KW - Printable

KW - Transfer embossing

KW - UV embossing

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JO - Organic Electronics

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ER -

Bottom gate organic thin-film transistors fabricated by ultraviolet transfer embossing with improved device performance

Abstract

ASJC Scopus Subject Areas

Keywords

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