Carbon nanotube for interconnects and nano-packaging application

Future electronic trend is faster speed, larger bandwidth, and higher power. These requirements stimulate the operating frequency of microelectronic devices to higher frequency range. Hence, conventional metal used in the interconnection in circuit would inevitably face skin effect and electromigration issues. Carbon nanotube (CNT) has received much attention due to its superior properties in high frequency applications. In this work, CNT array will be used for two packaging solutions: CNT-based TSV and CNT-based flip-chip. They were fabricated using a newly developed low-temperature CMOS-compatible CNT transfer technique. CNT growth was conducted on a donor substrate before CNT bundles were inserted into via holes or transferred onto chip/carrier to form the desired CNT-based device. Therefore, the device fabrication can be separated from high temperature CNT growth. Experimental studies validate CNT as potential material in RF interconnections.