Characterisation of defects generated during constant current InGaN-on-silicon LED operation

R. I. Made; Yu Gao; G. J. Syaranamual; W. A. Sasangka; L. Zhang; Xuan Sang Nguyen; Y. Y. Tay; J. S. Herrin; C. V. Thompson; C. L. Gan

doi:10.1016/j.microrel.2017.07.072

Characterisation of defects generated during constant current InGaN-on-silicon LED operation

R. I. Made, Yu Gao, G. J. Syaranamual, W. A. Sasangka, L. Zhang, Xuan Sang Nguyen, Y. Y. Tay, J. S. Herrin, C. V. Thompson, C. L. Gan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We studied the degradation of MOCVD-grown InGaN LEDs on Si substrates under constant current stressing. Characterisations using Deep Level Transient Spectroscopy and Electron Energy Loss Spectroscopy on active areas showed that the stressing had generated defects that have trap states at 0.26 eV below the conduction band edge (Ec – 0.26 eV) and that correlated with the active area's lower nitrogen content as compared to unstressed samples. The combination of Current-Voltage, Electroluminescence, Cathodoluminescence, and device simulations indicate that an increase in the density of these defects is correlated with an increase in the non-radiative carrier recombination that causes degradation in light emission. Preventing formation of these defects will be critical for improving InGaN-on-silicon LED reliability.

Original language	English
Pages (from-to)	561-565
Number of pages	5
Journal	Microelectronics Reliability
Volume	76-77
DOIs	https://doi.org/10.1016/j.microrel.2017.07.072
Publication status	Published - Sept 2017
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 Elsevier Ltd

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Cathodoluminescence
Defects
DLTS
Electroluminescence
GaN reliability
InGaN degradation
InGaN LED
InGaN LED degradation
InGaN LED-on-silicon
LED reliability
MOCVD
Nitrogen vacancies
Reliability

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10.1016/j.microrel.2017.07.072

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@article{6e3d730deb0a41529000a2b6c3562051,

title = "Characterisation of defects generated during constant current InGaN-on-silicon LED operation",

abstract = "We studied the degradation of MOCVD-grown InGaN LEDs on Si substrates under constant current stressing. Characterisations using Deep Level Transient Spectroscopy and Electron Energy Loss Spectroscopy on active areas showed that the stressing had generated defects that have trap states at 0.26 eV below the conduction band edge (Ec – 0.26 eV) and that correlated with the active area's lower nitrogen content as compared to unstressed samples. The combination of Current-Voltage, Electroluminescence, Cathodoluminescence, and device simulations indicate that an increase in the density of these defects is correlated with an increase in the non-radiative carrier recombination that causes degradation in light emission. Preventing formation of these defects will be critical for improving InGaN-on-silicon LED reliability.",

keywords = "Cathodoluminescence, Defects, DLTS, Electroluminescence, GaN reliability, InGaN degradation, InGaN LED, InGaN LED degradation, InGaN LED-on-silicon, LED reliability, MOCVD, Nitrogen vacancies, Reliability",

author = "Made, {R. I.} and Yu Gao and Syaranamual, {G. J.} and Sasangka, {W. A.} and L. Zhang and Nguyen, {Xuan Sang} and Tay, {Y. Y.} and Herrin, {J. S.} and Thompson, {C. V.} and Gan, {C. L.}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = sep,

doi = "10.1016/j.microrel.2017.07.072",

language = "English",

volume = "76-77",

pages = "561--565",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Characterisation of defects generated during constant current InGaN-on-silicon LED operation

AU - Made, R. I.

AU - Gao, Yu

AU - Syaranamual, G. J.

AU - Sasangka, W. A.

AU - Zhang, L.

AU - Nguyen, Xuan Sang

AU - Tay, Y. Y.

AU - Herrin, J. S.

AU - Thompson, C. V.

AU - Gan, C. L.

PY - 2017/9

Y1 - 2017/9

N2 - We studied the degradation of MOCVD-grown InGaN LEDs on Si substrates under constant current stressing. Characterisations using Deep Level Transient Spectroscopy and Electron Energy Loss Spectroscopy on active areas showed that the stressing had generated defects that have trap states at 0.26 eV below the conduction band edge (Ec – 0.26 eV) and that correlated with the active area's lower nitrogen content as compared to unstressed samples. The combination of Current-Voltage, Electroluminescence, Cathodoluminescence, and device simulations indicate that an increase in the density of these defects is correlated with an increase in the non-radiative carrier recombination that causes degradation in light emission. Preventing formation of these defects will be critical for improving InGaN-on-silicon LED reliability.

AB - We studied the degradation of MOCVD-grown InGaN LEDs on Si substrates under constant current stressing. Characterisations using Deep Level Transient Spectroscopy and Electron Energy Loss Spectroscopy on active areas showed that the stressing had generated defects that have trap states at 0.26 eV below the conduction band edge (Ec – 0.26 eV) and that correlated with the active area's lower nitrogen content as compared to unstressed samples. The combination of Current-Voltage, Electroluminescence, Cathodoluminescence, and device simulations indicate that an increase in the density of these defects is correlated with an increase in the non-radiative carrier recombination that causes degradation in light emission. Preventing formation of these defects will be critical for improving InGaN-on-silicon LED reliability.

KW - Cathodoluminescence

KW - Defects

KW - DLTS

KW - Electroluminescence

KW - GaN reliability

KW - InGaN degradation

KW - InGaN LED

KW - InGaN LED degradation

KW - InGaN LED-on-silicon

KW - LED reliability

KW - MOCVD

KW - Nitrogen vacancies

KW - Reliability

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U2 - 10.1016/j.microrel.2017.07.072

DO - 10.1016/j.microrel.2017.07.072

M3 - Article

AN - SCOPUS:85025429363

SN - 0026-2714

VL - 76-77

SP - 561

EP - 565

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Characterisation of defects generated during constant current InGaN-on-silicon LED operation

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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