Characteristics of mechanically milled silicon nanocrystals embedded in TEOS thin films

In this work, the unique synthesis of mechanically milled silicon nanocrystals (Si nc) embedded in tetraethylorthosilicate (TEOS) thin films is reported. The Si nc are required to be synthesized externally via inexpensive mechanical milling before it is mixed with the TEOS solution for spin coating. Si nc with a range of sizes, from 10 to 25 nm, have been synthesized using mechanical milling. These milled Si nc and milled Si nc embedded in TEOS thin film are characterized by differential thermal analysis (DTA), Raman spectroscopy and photoluminescence excitation (PLE). The defects, such as non-bridging oxide hole centers (NBOHCs), in amorphous SiO₂ are found to be the most probable dominant mechanism for the PL of milled Si nc embedded in films. The milled Si nc embedded in TEOS thin film is further developed into MOS capacitor. Charge trapping in Si nc with a V_FB shift of 0.4 V is observed.