Characterization of N-type tetrahedral amorphous carbon (TA-C)/P-type silicon heterojunction diodes

B. K. Tay; X. Shi; Fu Hui; L. K. Cheah

Characterization of N-type tetrahedral amorphous carbon (TA-C)/P-type silicon heterojunction diodes

B. K. Tay^*, X. Shi, Fu Hui, L. K. Cheah

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to conference › Paper › peer-review

Abstract

Heterojunction diodes were fabricated by depositing n-type ta-C (under different level of nitrogen-doping) on p-type crystalline silicon using Filtered Cathodic Vacuum Arc technique. The space charge limited current flow based on the I-V characteristics of the heterojunction diodes was observed. Capacitance-voltage (C-V) characteristics of the diodes showed that with an abrupt heterojunction between ta-C and Si, an interface state density of the order of 10¹¹ cm^-2 was obtained.

Original language	English
Pages	368-371
Number of pages	4
Publication status	Published - 1997
Externally published	Yes
Event	7th International Symposium on IC Technology, Systems and Applications ISIC 97 - Singapore, Singapore Duration: Sept 10 1997 → Sept 12 1997

Conference

Conference	7th International Symposium on IC Technology, Systems and Applications ISIC 97
Country/Territory	Singapore
City	Singapore
Period	9/10/97 → 9/12/97

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Characterization of N-type tetrahedral amorphous carbon (TA-C)/P-type silicon heterojunction diodes",

abstract = "Heterojunction diodes were fabricated by depositing n-type ta-C (under different level of nitrogen-doping) on p-type crystalline silicon using Filtered Cathodic Vacuum Arc technique. The space charge limited current flow based on the I-V characteristics of the heterojunction diodes was observed. Capacitance-voltage (C-V) characteristics of the diodes showed that with an abrupt heterojunction between ta-C and Si, an interface state density of the order of 1011 cm-2 was obtained.",

author = "Tay, {B. K.} and X. Shi and Fu Hui and Cheah, {L. K.}",

year = "1997",

language = "English",

pages = "368--371",

note = "7th International Symposium on IC Technology, Systems and Applications ISIC 97 ; Conference date: 10-09-1997 Through 12-09-1997",

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T1 - Characterization of N-type tetrahedral amorphous carbon (TA-C)/P-type silicon heterojunction diodes

AU - Tay, B. K.

AU - Shi, X.

AU - Hui, Fu

AU - Cheah, L. K.

PY - 1997

Y1 - 1997

N2 - Heterojunction diodes were fabricated by depositing n-type ta-C (under different level of nitrogen-doping) on p-type crystalline silicon using Filtered Cathodic Vacuum Arc technique. The space charge limited current flow based on the I-V characteristics of the heterojunction diodes was observed. Capacitance-voltage (C-V) characteristics of the diodes showed that with an abrupt heterojunction between ta-C and Si, an interface state density of the order of 1011 cm-2 was obtained.

AB - Heterojunction diodes were fabricated by depositing n-type ta-C (under different level of nitrogen-doping) on p-type crystalline silicon using Filtered Cathodic Vacuum Arc technique. The space charge limited current flow based on the I-V characteristics of the heterojunction diodes was observed. Capacitance-voltage (C-V) characteristics of the diodes showed that with an abrupt heterojunction between ta-C and Si, an interface state density of the order of 1011 cm-2 was obtained.

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UR - http://www.scopus.com/inward/citedby.url?scp=1842729442&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1842729442

SP - 368

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T2 - 7th International Symposium on IC Technology, Systems and Applications ISIC 97

Y2 - 10 September 1997 through 12 September 1997

ER -

Characterization of N-type tetrahedral amorphous carbon (TA-C)/P-type silicon heterojunction diodes

Abstract

Conference

ASJC Scopus Subject Areas

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