Characterization of raped thermal oxidation of AIAs on GaAs/AlGaAs structure

S. L. Ng; B. S. Ool; Y. L. Lam; Y. C. Chan; Y. Zhou

doi:10.1002/(sici)1096-9918(200001)29:1<33::aid-sia690>3.0.co;2-m

Characterization of raped thermal oxidation of AIAs on GaAs/AlGaAs structure

S. L. Ng^*, B. S. Ool, Y. L. Lam, Y. C. Chan, Y. Zhou

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report on the oxidation of the AIAs epitaxial layer on a GaAs/AlGaAs double-quantum-well laser structure using a one-step rapid thermal process. Oxidation of the AIAs layer was carried out under oxygen-rich conditions in the temperature range 600-800°C using a rapid thermal processor. Energy dispersive x-ray and Raman spectroscopy measurements were performed on the oxidized samples to study the composition of the AIAs layer after processing. It was found that oxidation of the AIAs layer was due to the strong preferential oxidation of aluminium compared to arsenic. From the atomic force microscopy measurements, the film was found to be of good uniformity.

Original language	English
Pages (from-to)	33-37
Number of pages	5
Journal	Surface and Interface Analysis
Volume	29
Issue number	1
DOIs	https://doi.org/10.1002/(sici)1096-9918(200001)29:1<33::aid-sia690>3.0.co;2-m
Publication status	Published - 2000
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Keywords

Aias
Atomic force microscopy
Energy-dispersive x-ray imaging
Oxidation
Raman spectroscopy
Surface segregation
Thermal diffusion

Access to Document

10.1002/(sici)1096-9918(200001)29:1<33::aid-sia690>3.0.co;2-m

Cite this

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title = "Characterization of raped thermal oxidation of AIAs on GaAs/AlGaAs structure",

abstract = "We report on the oxidation of the AIAs epitaxial layer on a GaAs/AlGaAs double-quantum-well laser structure using a one-step rapid thermal process. Oxidation of the AIAs layer was carried out under oxygen-rich conditions in the temperature range 600-800°C using a rapid thermal processor. Energy dispersive x-ray and Raman spectroscopy measurements were performed on the oxidized samples to study the composition of the AIAs layer after processing. It was found that oxidation of the AIAs layer was due to the strong preferential oxidation of aluminium compared to arsenic. From the atomic force microscopy measurements, the film was found to be of good uniformity.",

keywords = "Aias, Atomic force microscopy, Energy-dispersive x-ray imaging, Oxidation, Raman spectroscopy, Surface segregation, Thermal diffusion",

author = "Ng, {S. L.} and Ool, {B. S.} and Lam, {Y. L.} and Chan, {Y. C.} and Y. Zhou",

year = "2000",

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language = "English",

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pages = "33--37",

journal = "Surface and Interface Analysis",

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TY - JOUR

T1 - Characterization of raped thermal oxidation of AIAs on GaAs/AlGaAs structure

AU - Ng, S. L.

AU - Ool, B. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Zhou, Y.

PY - 2000

Y1 - 2000

N2 - We report on the oxidation of the AIAs epitaxial layer on a GaAs/AlGaAs double-quantum-well laser structure using a one-step rapid thermal process. Oxidation of the AIAs layer was carried out under oxygen-rich conditions in the temperature range 600-800°C using a rapid thermal processor. Energy dispersive x-ray and Raman spectroscopy measurements were performed on the oxidized samples to study the composition of the AIAs layer after processing. It was found that oxidation of the AIAs layer was due to the strong preferential oxidation of aluminium compared to arsenic. From the atomic force microscopy measurements, the film was found to be of good uniformity.

AB - We report on the oxidation of the AIAs epitaxial layer on a GaAs/AlGaAs double-quantum-well laser structure using a one-step rapid thermal process. Oxidation of the AIAs layer was carried out under oxygen-rich conditions in the temperature range 600-800°C using a rapid thermal processor. Energy dispersive x-ray and Raman spectroscopy measurements were performed on the oxidized samples to study the composition of the AIAs layer after processing. It was found that oxidation of the AIAs layer was due to the strong preferential oxidation of aluminium compared to arsenic. From the atomic force microscopy measurements, the film was found to be of good uniformity.

KW - Aias

KW - Atomic force microscopy

KW - Energy-dispersive x-ray imaging

KW - Oxidation

KW - Raman spectroscopy

KW - Surface segregation

KW - Thermal diffusion

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DO - 10.1002/(sici)1096-9918(200001)29:1<33::aid-sia690>3.0.co;2-m

M3 - Article

AN - SCOPUS:0033881114

SN - 0142-2421

VL - 29

SP - 33

EP - 37

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 1

ER -

Characterization of raped thermal oxidation of AIAs on GaAs/AlGaAs structure

Abstract

ASJC Scopus Subject Areas

Keywords

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