Charging dynamics of discrete gold nanoparticle arrays self-assembled within a poly(styrene- b-4-vinylpyridine) diblock copolymer template

W. L. Leong; N. Mathews; S. G. Mhaisalkar; T. P. Chen; P. S. Lee

doi:10.1063/1.3043436

Charging dynamics of discrete gold nanoparticle arrays self-assembled within a poly(styrene- b-4-vinylpyridine) diblock copolymer template

W. L. Leong, N. Mathews, S. G. Mhaisalkar, T. P. Chen, P. S. Lee

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The kinetics of charging and discharging of charge carriers in a memory device based on gold nanoparticles in self-assembled block copolymer of poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) has been studied. Hole trapping is observed to be more efficient than electron trapping and is attributed to a lower electron injection current (due to presence of Schottky barrier between the gold electrode and P4VP layer). At higher electric fields (>0.4 MV/cm), quasi-two-dimensional charge transport through the arrays of gold nanoparticles in P4VP nanodomains is observed. The contribution of electrode work function was demonstrated with improved electron charging by the replacement of gold electrode with aluminum.

Original language	English
Article number	222908
Journal	Applied Physics Letters
Volume	93
Issue number	22
DOIs	https://doi.org/10.1063/1.3043436
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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abstract = "The kinetics of charging and discharging of charge carriers in a memory device based on gold nanoparticles in self-assembled block copolymer of poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) has been studied. Hole trapping is observed to be more efficient than electron trapping and is attributed to a lower electron injection current (due to presence of Schottky barrier between the gold electrode and P4VP layer). At higher electric fields (>0.4 MV/cm), quasi-two-dimensional charge transport through the arrays of gold nanoparticles in P4VP nanodomains is observed. The contribution of electrode work function was demonstrated with improved electron charging by the replacement of gold electrode with aluminum.",

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AU - Chen, T. P.

AU - Lee, P. S.

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N2 - The kinetics of charging and discharging of charge carriers in a memory device based on gold nanoparticles in self-assembled block copolymer of poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) has been studied. Hole trapping is observed to be more efficient than electron trapping and is attributed to a lower electron injection current (due to presence of Schottky barrier between the gold electrode and P4VP layer). At higher electric fields (>0.4 MV/cm), quasi-two-dimensional charge transport through the arrays of gold nanoparticles in P4VP nanodomains is observed. The contribution of electrode work function was demonstrated with improved electron charging by the replacement of gold electrode with aluminum.

AB - The kinetics of charging and discharging of charge carriers in a memory device based on gold nanoparticles in self-assembled block copolymer of poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) has been studied. Hole trapping is observed to be more efficient than electron trapping and is attributed to a lower electron injection current (due to presence of Schottky barrier between the gold electrode and P4VP layer). At higher electric fields (>0.4 MV/cm), quasi-two-dimensional charge transport through the arrays of gold nanoparticles in P4VP nanodomains is observed. The contribution of electrode work function was demonstrated with improved electron charging by the replacement of gold electrode with aluminum.

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Charging dynamics of discrete gold nanoparticle arrays self-assembled within a poly(styrene- b-4-vinylpyridine) diblock copolymer template

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