Charging phenomena in pentacene-gold nanoparticle memory device

W. L. Leong; P. S. Lee; S. G. Mhaisalkar; T. P. Chen; A. Dodabalapur

doi:10.1063/1.2435598

Charging phenomena in pentacene-gold nanoparticle memory device

W. L. Leong^*, P. S. Lee, S. G. Mhaisalkar, T. P. Chen, A. Dodabalapur

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

150 Citations (Scopus)

Abstract

The authors demonstrate a new organic memory system, using pentacene as the active semiconductor layer and citrate-stabilized gold (Au) nanoparticles as charge storage elements. A pronounced clockwise capacitance-voltage (C-V) hysteresis is observed with a memory window of 1.25-2.05 V achievable under 5-10 V programing range. Similar clockwise C-V hysteresis window and an almost constant full width at half maximum of the conductance peaks in conductance-voltage (G-V) characteristics, obtained in the frequency range of 50 kHz-1 MHz, indicated that positive charge trapping/detrapping originated mainly from the Au nanoparticles.

Original language	English
Article number	042906
Journal	Applied Physics Letters
Volume	90
Issue number	4
DOIs	https://doi.org/10.1063/1.2435598
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2435598

Cite this

@article{6eeb28fa1df84aa8b86e97dd95f1bd0b,

title = "Charging phenomena in pentacene-gold nanoparticle memory device",

abstract = "The authors demonstrate a new organic memory system, using pentacene as the active semiconductor layer and citrate-stabilized gold (Au) nanoparticles as charge storage elements. A pronounced clockwise capacitance-voltage (C-V) hysteresis is observed with a memory window of 1.25-2.05 V achievable under 5-10 V programing range. Similar clockwise C-V hysteresis window and an almost constant full width at half maximum of the conductance peaks in conductance-voltage (G-V) characteristics, obtained in the frequency range of 50 kHz-1 MHz, indicated that positive charge trapping/detrapping originated mainly from the Au nanoparticles.",

author = "Leong, \{W. L.\} and Lee, \{P. S.\} and Mhaisalkar, \{S. G.\} and Chen, \{T. P.\} and A. Dodabalapur",

year = "2007",

doi = "10.1063/1.2435598",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Charging phenomena in pentacene-gold nanoparticle memory device

AU - Leong, W. L.

AU - Lee, P. S.

AU - Mhaisalkar, S. G.

AU - Chen, T. P.

AU - Dodabalapur, A.

PY - 2007

Y1 - 2007

N2 - The authors demonstrate a new organic memory system, using pentacene as the active semiconductor layer and citrate-stabilized gold (Au) nanoparticles as charge storage elements. A pronounced clockwise capacitance-voltage (C-V) hysteresis is observed with a memory window of 1.25-2.05 V achievable under 5-10 V programing range. Similar clockwise C-V hysteresis window and an almost constant full width at half maximum of the conductance peaks in conductance-voltage (G-V) characteristics, obtained in the frequency range of 50 kHz-1 MHz, indicated that positive charge trapping/detrapping originated mainly from the Au nanoparticles.

AB - The authors demonstrate a new organic memory system, using pentacene as the active semiconductor layer and citrate-stabilized gold (Au) nanoparticles as charge storage elements. A pronounced clockwise capacitance-voltage (C-V) hysteresis is observed with a memory window of 1.25-2.05 V achievable under 5-10 V programing range. Similar clockwise C-V hysteresis window and an almost constant full width at half maximum of the conductance peaks in conductance-voltage (G-V) characteristics, obtained in the frequency range of 50 kHz-1 MHz, indicated that positive charge trapping/detrapping originated mainly from the Au nanoparticles.

UR - http://www.scopus.com/inward/record.url?scp=33846567589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846567589&partnerID=8YFLogxK

U2 - 10.1063/1.2435598

DO - 10.1063/1.2435598

M3 - Article

AN - SCOPUS:33846567589

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042906

ER -

Charging phenomena in pentacene-gold nanoparticle memory device

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this