Chemical sensing investigations on Zn-In 2O 3 nanowires

Nandan Singh; Andrea Ponzoni; Elisabetta Comini; Pooi See Lee

doi:10.1016/j.snb.2012.03.054

Chemical sensing investigations on Zn-In ₂O ₃ nanowires

Nandan Singh, Andrea Ponzoni, Elisabetta Comini, Pooi See Lee^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

This work illustrates the sensing behavior of Zn-doped and undoped In ₂O ₃ nanowires toward pollutant gases. An enhanced sensor response to reducing gases (e.g. H ₂, CO and ethanol) from indium zinc oxide (IZO) nanowires in comparison to In ₂O ₃ nanowires is obtained. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. These adsorbed oxygen ions enhance the sensor responses for CO (from 4.5 to 21.5 for 400 ppm), H ₂ (from 4.7 to 32.5 for 4000 ppm) and ethanol (from 3.5 to 60 for 100 ppm). On the other hand, the sensor response for NO ₂ reduces (from 17.5 to 6.5 for 1 ppm NO ₂) after Zn-doping. Opposing temperature dependent sensor response from IZO nanowires toward NO ₂ is observed at higher temperature (above 300 °C). This is attributed to the downshift in the Fermi level of IZO due to dissociative NO ₂ interaction at higher working temperatures which produces oxygen ions that diffuse into the nanowire.

Original language	English
Pages (from-to)	244-248
Number of pages	5
Journal	Sensors and Actuators, B: Chemical
Volume	171-172
DOIs	https://doi.org/10.1016/j.snb.2012.03.054
Publication status	Published - Aug 2012
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Gas sensor
Indium oxide
Nanowires
Oxygen vacancies
Zn-doping

Access to Document

10.1016/j.snb.2012.03.054

Cite this

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title = "Chemical sensing investigations on Zn-In 2O 3 nanowires",

abstract = "This work illustrates the sensing behavior of Zn-doped and undoped In 2O 3 nanowires toward pollutant gases. An enhanced sensor response to reducing gases (e.g. H 2, CO and ethanol) from indium zinc oxide (IZO) nanowires in comparison to In 2O 3 nanowires is obtained. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. These adsorbed oxygen ions enhance the sensor responses for CO (from 4.5 to 21.5 for 400 ppm), H 2 (from 4.7 to 32.5 for 4000 ppm) and ethanol (from 3.5 to 60 for 100 ppm). On the other hand, the sensor response for NO 2 reduces (from 17.5 to 6.5 for 1 ppm NO 2) after Zn-doping. Opposing temperature dependent sensor response from IZO nanowires toward NO 2 is observed at higher temperature (above 300 °C). This is attributed to the downshift in the Fermi level of IZO due to dissociative NO 2 interaction at higher working temperatures which produces oxygen ions that diffuse into the nanowire.",

keywords = "Gas sensor, Indium oxide, Nanowires, Oxygen vacancies, Zn-doping",

author = "Nandan Singh and Andrea Ponzoni and Elisabetta Comini and Lee, {Pooi See}",

year = "2012",

month = aug,

doi = "10.1016/j.snb.2012.03.054",

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volume = "171-172",

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journal = "Sensors and Actuators, B: Chemical",

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T1 - Chemical sensing investigations on Zn-In 2O 3 nanowires

AU - Singh, Nandan

AU - Ponzoni, Andrea

AU - Comini, Elisabetta

AU - Lee, Pooi See

PY - 2012/8

Y1 - 2012/8

N2 - This work illustrates the sensing behavior of Zn-doped and undoped In 2O 3 nanowires toward pollutant gases. An enhanced sensor response to reducing gases (e.g. H 2, CO and ethanol) from indium zinc oxide (IZO) nanowires in comparison to In 2O 3 nanowires is obtained. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. These adsorbed oxygen ions enhance the sensor responses for CO (from 4.5 to 21.5 for 400 ppm), H 2 (from 4.7 to 32.5 for 4000 ppm) and ethanol (from 3.5 to 60 for 100 ppm). On the other hand, the sensor response for NO 2 reduces (from 17.5 to 6.5 for 1 ppm NO 2) after Zn-doping. Opposing temperature dependent sensor response from IZO nanowires toward NO 2 is observed at higher temperature (above 300 °C). This is attributed to the downshift in the Fermi level of IZO due to dissociative NO 2 interaction at higher working temperatures which produces oxygen ions that diffuse into the nanowire.

AB - This work illustrates the sensing behavior of Zn-doped and undoped In 2O 3 nanowires toward pollutant gases. An enhanced sensor response to reducing gases (e.g. H 2, CO and ethanol) from indium zinc oxide (IZO) nanowires in comparison to In 2O 3 nanowires is obtained. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. These adsorbed oxygen ions enhance the sensor responses for CO (from 4.5 to 21.5 for 400 ppm), H 2 (from 4.7 to 32.5 for 4000 ppm) and ethanol (from 3.5 to 60 for 100 ppm). On the other hand, the sensor response for NO 2 reduces (from 17.5 to 6.5 for 1 ppm NO 2) after Zn-doping. Opposing temperature dependent sensor response from IZO nanowires toward NO 2 is observed at higher temperature (above 300 °C). This is attributed to the downshift in the Fermi level of IZO due to dissociative NO 2 interaction at higher working temperatures which produces oxygen ions that diffuse into the nanowire.

KW - Gas sensor

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KW - Zn-doping

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