Chemical Vapor Deposition of High-Quality and Atomically Layered ReS₂

Recently, anisotropic 2D materials, such as black phosphorus and rhenium disulfides (ReS₂), have attracted a lot attention because of their unique applications on electronics and optoelectronics. In this work, the direct growth of high-quality ReS₂ atomic layers and nanoribbons has been demonstrated by using chemical vapor deposition (CVD) method. A possible growth mechanism is proposed according to the controlled experiments. The CVD ReS₂-based filed-effect transistors (FETs) show n-type semiconducting behavior with a current on/off ratio of ≈10⁶ and a charge carrier mobility of ≈9.3 cm² Vs^-1. These results suggested that the quality of CVD grown ReS₂ is comparable to mechanically exfoliated ReS₂, which is also further supported by atomic force microscopy imaging, high-resolution transmission electron microscopy imaging and thickness-dependent Raman spectra. The study here indicates that CVD grown ReS₂ may pave the way for the large-scale fabrication of ReS₂-based high-performance optoelectronic devices, such as anisotropic FETs and polarization detection.