CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

Yue Wang; Wan Khai Loke; Yu Gao; Kwang Hong Lee; Kenneth Eng Kian Lee; Chee Lip Gan; Chuan Seng Tan; Eugene A. Fitzgerald; Soon Fatt Yoon

doi:10.1109/TED.2021.3119557

CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

Yue Wang^*, Wan Khai Loke, Yu Gao, Kwang Hong Lee, Kenneth Eng Kian Lee, Chee Lip Gan, Chuan Seng Tan, Eugene A. Fitzgerald, Soon Fatt Yoon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristics of the HBT devices fabricated using the Ti/TiN/Al metal contacts have been analyzed. Contact resistances ${(}{R}_{c}{)} < 0.1~\Omega \cdot $ mm for n-InGaAs and $0.8~\Omega \cdot $ mm for p-GaAs can be achieved. A dc current gain of 45 with a collector-base breakdown voltage (BVcbo) of 15.65 V is achieved. The ideality factor of the emitter-base current ( ${n}_{b}$ ) and base-collector current ( ${n}_{c}$ ) is 1.03 and 1.44, respectively, after RTA at 450 °C. The dc characteristics remain stable upon prolonged annealing at 450 °C for 45 min. This high thermal budget non-gold ohmic contact is suitable for Si-CMOS integration and enables the potential for hybrid III-V CMOS technology for 5G and mm-wave applications.

Original language	English
Pages (from-to)	6065-6068
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	12
DOIs	https://doi.org/10.1109/TED.2021.3119557
Publication status	Published - Dec 1 2021
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

heterojunction bipolar transistors (HBTs)
III-V and CMOS integration
ohmic contacts
rapid thermal processing

Access to Document

10.1109/TED.2021.3119557

Cite this

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title = "CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate",

abstract = "In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristics of the HBT devices fabricated using the Ti/TiN/Al metal contacts have been analyzed. Contact resistances ${(}{R}_{c}{)} < 0.1~\Omega \cdot $ mm for n-InGaAs and $0.8~\Omega \cdot $ mm for p-GaAs can be achieved. A dc current gain of 45 with a collector-base breakdown voltage (BVcbo) of 15.65 V is achieved. The ideality factor of the emitter-base current ( ${n}_{b}$ ) and base-collector current ( ${n}_{c}$ ) is 1.03 and 1.44, respectively, after RTA at 450 °C. The dc characteristics remain stable upon prolonged annealing at 450 °C for 45 min. This high thermal budget non-gold ohmic contact is suitable for Si-CMOS integration and enables the potential for hybrid III-V CMOS technology for 5G and mm-wave applications.",

keywords = "heterojunction bipolar transistors (HBTs), III-V and CMOS integration, ohmic contacts, rapid thermal processing",

author = "Yue Wang and Loke, {Wan Khai} and Yu Gao and Lee, {Kwang Hong} and {Kian Lee}, {Kenneth Eng} and Gan, {Chee Lip} and Tan, {Chuan Seng} and Fitzgerald, {Eugene A.} and Yoon, {Soon Fatt}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

month = dec,

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doi = "10.1109/TED.2021.3119557",

language = "English",

volume = "68",

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journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

AU - Wang, Yue

AU - Loke, Wan Khai

AU - Gao, Yu

AU - Lee, Kwang Hong

AU - Kian Lee, Kenneth Eng

AU - Gan, Chee Lip

AU - Tan, Chuan Seng

AU - Fitzgerald, Eugene A.

AU - Yoon, Soon Fatt

PY - 2021/12/1

Y1 - 2021/12/1

N2 - In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristics of the HBT devices fabricated using the Ti/TiN/Al metal contacts have been analyzed. Contact resistances ${(}{R}_{c}{)} < 0.1~\Omega \cdot $ mm for n-InGaAs and $0.8~\Omega \cdot $ mm for p-GaAs can be achieved. A dc current gain of 45 with a collector-base breakdown voltage (BVcbo) of 15.65 V is achieved. The ideality factor of the emitter-base current ( ${n}_{b}$ ) and base-collector current ( ${n}_{c}$ ) is 1.03 and 1.44, respectively, after RTA at 450 °C. The dc characteristics remain stable upon prolonged annealing at 450 °C for 45 min. This high thermal budget non-gold ohmic contact is suitable for Si-CMOS integration and enables the potential for hybrid III-V CMOS technology for 5G and mm-wave applications.

AB - In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristics of the HBT devices fabricated using the Ti/TiN/Al metal contacts have been analyzed. Contact resistances ${(}{R}_{c}{)} < 0.1~\Omega \cdot $ mm for n-InGaAs and $0.8~\Omega \cdot $ mm for p-GaAs can be achieved. A dc current gain of 45 with a collector-base breakdown voltage (BVcbo) of 15.65 V is achieved. The ideality factor of the emitter-base current ( ${n}_{b}$ ) and base-collector current ( ${n}_{c}$ ) is 1.03 and 1.44, respectively, after RTA at 450 °C. The dc characteristics remain stable upon prolonged annealing at 450 °C for 45 min. This high thermal budget non-gold ohmic contact is suitable for Si-CMOS integration and enables the potential for hybrid III-V CMOS technology for 5G and mm-wave applications.

KW - heterojunction bipolar transistors (HBTs)

KW - III-V and CMOS integration

KW - ohmic contacts

KW - rapid thermal processing

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SN - 0018-9383

VL - 68

SP - 6065

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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