Comparative Analysis of Si, SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft

Mridul Marwaha; M. H.M. Sathik; Kuntal Satpathi; Yang Yu; Firman Sasongko; Josep Pou; Chandana Gajanayake; Amit Kumar Gupta

doi:10.1109/ECCE-Asia49820.2021.9479031

Comparative Analysis of Si, SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft

Mridul Marwaha, M. H.M. Sathik, Kuntal Satpathi, Yang Yu, Firman Sasongko, Josep Pou, Chandana Gajanayake, Amit Kumar Gupta

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

A dc solid-state power controller (SSPC) is a semiconductor-based circuit breaker used for fault isolation in aerospace applications. Device selection is important to ensure the reliability and performance of the SSPC. In this paper, Si, SiC, and GaN field-effect transistors are compared under steady-state and transient conditions. Experimental results are presented to evaluate the performance and characteristics.

Original language	English
Title of host publication	Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	592-597
Number of pages	6
ISBN (Electronic)	9781728163444
DOIs	https://doi.org/10.1109/ECCE-Asia49820.2021.9479031
Publication status	Published - May 24 2021
Externally published	Yes
Event	12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 - Virtual, Singapore, Singapore Duration: May 24 2021 → May 27 2021

Publication series

Name	Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021

Conference

Conference	12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
Country/Territory	Singapore
City	Virtual, Singapore
Period	5/24/21 → 5/27/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

ASJC Scopus Subject Areas

Control and Optimization
Energy Engineering and Power Technology
Electrical and Electronic Engineering
Mechanical Engineering

Keywords

dc circuit breaker
dc system protection
more electric aircraft
Solid state power controller
wide bandgap semiconductor devices

Access to Document

10.1109/ECCE-Asia49820.2021.9479031

Cite this

Marwaha, M., Sathik, M. H. M., Satpathi, K., Yu, Y., Sasongko, F., Pou, J., Gajanayake, C., & Gupta, A. K. (2021). Comparative Analysis of Si, SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft. In Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 (pp. 592-597). Article 9479031 (Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE-Asia49820.2021.9479031

Marwaha, Mridul ; Sathik, M. H.M. ; Satpathi, Kuntal et al. / Comparative Analysis of Si, SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft. Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 592-597 (Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021).

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title = "Comparative Analysis of Si, SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft",

abstract = "A dc solid-state power controller (SSPC) is a semiconductor-based circuit breaker used for fault isolation in aerospace applications. Device selection is important to ensure the reliability and performance of the SSPC. In this paper, Si, SiC, and GaN field-effect transistors are compared under steady-state and transient conditions. Experimental results are presented to evaluate the performance and characteristics.",

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doi = "10.1109/ECCE-Asia49820.2021.9479031",

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Marwaha, M, Sathik, MHM, Satpathi, K, Yu, Y, Sasongko, F, Pou, J, Gajanayake, C & Gupta, AK 2021, Comparative Analysis of Si, SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft. in Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021., 9479031, Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021, Institute of Electrical and Electronics Engineers Inc., pp. 592-597, 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021, Virtual, Singapore, Singapore, 5/24/21. https://doi.org/10.1109/ECCE-Asia49820.2021.9479031

Comparative Analysis of Si, SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft. / Marwaha, Mridul; Sathik, M. H.M.; Satpathi, Kuntal et al.
Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 592-597 9479031 (Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Yu, Yang

AU - Sasongko, Firman

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AB - A dc solid-state power controller (SSPC) is a semiconductor-based circuit breaker used for fault isolation in aerospace applications. Device selection is important to ensure the reliability and performance of the SSPC. In this paper, Si, SiC, and GaN field-effect transistors are compared under steady-state and transient conditions. Experimental results are presented to evaluate the performance and characteristics.

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Marwaha M, Sathik MHM, Satpathi K, Yu Y, Sasongko F, Pou J et al. Comparative Analysis of Si, SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft. In Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 592-597. 9479031. (Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021). doi: 10.1109/ECCE-Asia49820.2021.9479031

Comparative Analysis of Si, SiC and GaN Field-Effect Transistors for DC Solid-State Power Controllers in More Electric Aircraft

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus Subject Areas

Keywords

Access to Document

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Cite this