Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p+/n diodes

D. Z. Chi; D. Mangelinck; S. K. Lahiri; P. S. Lee; K. L. Pey

doi:10.1063/1.1374496

Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p⁺/n diodes

D. Z. Chi^*, D. Mangelinck, S. K. Lahiri, P. S. Lee, K. L. Pey

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

A comparative study of the I-V characteristics of p⁺/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I-V characteristics were observed for some of the diodes which were silicided with pure Ni at 700°C while good I-V characteristics were observed for other diodes. Our results show that the forward current in the diodes with good I-V characteristics is dominated by electron diffusion in the p^- region. For diodes with higher saturation currents, it has been concluded that both forward and reverse currents in these diodes are dominated by the current following through Schottky contacts that are formed due to inadvertent penetration of NiSi spikes through the p⁺ region into n region. The formation of Schottky contact was not observed in diodes silicided with a Ni(Pt) alloy, providing a clear evidence of enhanced thermal stability of Pt containing NiSi.

Original language	English
Pages (from-to)	3256-3258
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	21
DOIs	https://doi.org/10.1063/1.1374496
Publication status	Published - May 21 2001
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1374496

Cite this

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title = "Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p+/n diodes",

abstract = "A comparative study of the I-V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I-V characteristics were observed for some of the diodes which were silicided with pure Ni at 700°C while good I-V characteristics were observed for other diodes. Our results show that the forward current in the diodes with good I-V characteristics is dominated by electron diffusion in the p- region. For diodes with higher saturation currents, it has been concluded that both forward and reverse currents in these diodes are dominated by the current following through Schottky contacts that are formed due to inadvertent penetration of NiSi spikes through the p+ region into n region. The formation of Schottky contact was not observed in diodes silicided with a Ni(Pt) alloy, providing a clear evidence of enhanced thermal stability of Pt containing NiSi.",

author = "Chi, {D. Z.} and D. Mangelinck and Lahiri, {S. K.} and Lee, {P. S.} and Pey, {K. L.}",

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T1 - Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p+/n diodes

AU - Chi, D. Z.

AU - Mangelinck, D.

AU - Lahiri, S. K.

AU - Lee, P. S.

AU - Pey, K. L.

PY - 2001/5/21

Y1 - 2001/5/21

N2 - A comparative study of the I-V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I-V characteristics were observed for some of the diodes which were silicided with pure Ni at 700°C while good I-V characteristics were observed for other diodes. Our results show that the forward current in the diodes with good I-V characteristics is dominated by electron diffusion in the p- region. For diodes with higher saturation currents, it has been concluded that both forward and reverse currents in these diodes are dominated by the current following through Schottky contacts that are formed due to inadvertent penetration of NiSi spikes through the p+ region into n region. The formation of Schottky contact was not observed in diodes silicided with a Ni(Pt) alloy, providing a clear evidence of enhanced thermal stability of Pt containing NiSi.

AB - A comparative study of the I-V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I-V characteristics were observed for some of the diodes which were silicided with pure Ni at 700°C while good I-V characteristics were observed for other diodes. Our results show that the forward current in the diodes with good I-V characteristics is dominated by electron diffusion in the p- region. For diodes with higher saturation currents, it has been concluded that both forward and reverse currents in these diodes are dominated by the current following through Schottky contacts that are formed due to inadvertent penetration of NiSi spikes through the p+ region into n region. The formation of Schottky contact was not observed in diodes silicided with a Ni(Pt) alloy, providing a clear evidence of enhanced thermal stability of Pt containing NiSi.

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